The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets

The physics of the electronic excitation in semiconductors induced by sub-GeV dark matter (DM) have been extensively discussed in literature, under the framework of the standard plane wave (PW) and pseudopotential calculation scheme. In this paper, we investigate the implication of the all-electron (AE) reconstruction on estimation of the DM-induced electronic transition event rates. As a benchmark study, we first calculate the wavefunctions in silicon and germanium bulk crystals based on both the AE and pseudo (PS) schemes within the projector augmented wave (PAW) framework, and then make comparisons between the calculated excitation event rates obtained from these two approaches. It turns out that in process where large momentum transfer is kinetically allowed, the two calculated event rates can differ by a factor of a few. Such discrepancies are found to stem from the high-momentum components neglected in the PS scheme. It is thus implied that the correction from the AE wavefunction in the core region is necessary for an accurate estimate of the DM-induced transition event rate in semiconductors.Comment: A missing factor $64^{-3/2}=1/512$ associated with the Fourier transformation is added to both the AE and PS event rates in this version. The ratio between the AE and PS event rates is not affecte

Topological crystalline antiferromagnetic state in tetragonal FeS

Integration between magnetism and topology is an exotic phenomenon in condensed-matter physics. Here, we propose an exotic phase named topological crystalline antiferromagnetic state, in which antiferromagnetism intrinsically integrates with nontrivial topology, and we suggest such a state can be realized in tetragonal FeS. A combination of first-principles calculations and symmetry analyses shows that the topological crystalline antiferromagnetic state arises from band reconstruction induced by pair checker-board antiferromagnetic order together with band-gap opening induced by intrinsic spin-orbit coupling in tetragonal FeS. The topological crystalline antiferromagnetic state is protected by the product of fractional translation symmetry, mirror symmetry, and time-reversal symmetry, and present some unique features. In contrast to strong topological insulators, the topological robustness is surface-dependent. These findings indicate that non-trivial topological states could emerge in pure antiferromagnetic materials, which sheds new light on potential applications of topological properties in fast-developing antiferromagnetic spintronics.Comment: 8 pages, 6 figure

Fractional quantum Hall effect of topological surface states under a strong tilted magnetic field

The fractional quantum Hall effect (FQHE) of topological surface-state particles under a tilted strong magnetic field is theoretically studied by using the exact diagonalization method. The Haldane's pseudopotentials for the Coulomb interaction are analytically obtained. The results show that by increasing the in-plane component of the tilted magnetic field, the FQHE state at $n$=0 Landau level (LL) becomes more stable, while the stabilities of $n$=$\pm1$ LLs become weaker. Moreover, we find that the excitation gaps of the $\nu=1/3$ FQHE states increase as the tilt angle is increased.Comment: 4.2 pages, 4 figure