Robust Quantum State Transfer in Random Unpolarized Spin Chains

We propose and analyze a new approach for quantum state transfer between remote spin qubits. Specifically, we demonstrate that coherent quantum coupling between remote qubits can be achieved via certain classes of random, unpolarized (infinite temperature) spin chains. Our method is robust to coupling strength disorder and does not require manipulation or control over individual spins. In principle, it can be used to attain perfect state transfer over arbitrarily long range via purely Hamiltonian evolution and may be particularly applicable in a solid-state quantum information processor. As an example, we demonstrate that it can be used to attain strong coherent coupling between Nitrogen-Vacancy centers separated by micrometer distances at room temperature. Realistic imperfections and decoherence effects are analyzed.Comment: 4 pages, 2 figures. V2: Modified discussion of disorder, added references - final version as published in Phys. Rev. Let

On the error term in Weyl's law for the Heisenberg manifolds (II)

In this paper we study the mean square of the error term in the Weyl's law of an irrational $(2l+1)$-dimensional Heisenberg manifold . An asymptotic formula is established

Two-dimensional molecular para-hydrogen and ortho-deuterium at zero temperature

We study molecular para-hydrogen (p-${\rm H_{2}}$) and ortho-deuterium (o-${\rm D_{2}}$) in two dimensions and in the limit of zero temperature by means of the diffusion Monte Carlo method. We report energetic and structural properties of both systems like the total and kinetic energy per particle, radial pair distribution function, and Lindemann's ratio in the low pressure regime. By comparing the total energy per particle as a function of the density in liquid and solid p-${\rm H_{2}}$, we show that molecular para-hydrogen, and also ortho-deuterium, remain solid at zero temperature. Interestingly, we assess the quality of three different symmetrized trial wave functions, based on the Nosanow-Jastrow model, in the p-${\rm H_{2}}$ solid film at the variational level. In particular, we analyze a new type of symmetrized trial wave function which has been used very recently to describe solid $^{4}$He and found that also characterizes hydrogen satisfactorily. With this wave function, we show that the one-body density matrix $\varrho_{1} (r)$ of solid p-${\rm H_{2}}$ possesses off-diagonal long range order, with a condensate fraction that increases sizably in the negative pressure regime.Comment: 11 pages, 9 figure

Two-photon interference with two independent pseudo-thermal sources

The nature of two-photon interference is a subject that has aroused renewed interest in recent years and is still under debate. In this paper we report the first observation of two-photon interference with independent pseudo-thermal sources in which sub-wavelength interference is observed. The phenomenon may be described in terms of the classical statistical distribution of the two sources and their optical transfer functions.Comment: Phys. Rev. A 74, 053807 (2006

Effective Vortex Pinning in MgB2 thin films

We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD process produces films with structural disorder on a scale less that the coherence length that further improves pinning, but also depresses Tc

Superconducting magnesium diboride films on Silicon with Tc0 about 24K grown via vacuum annealing from stoichiometric precursors

Superconducting magnesium diboride films with Tc0 ~ 24 K and sharp transition \~ 1 K were successfully prepared on silicon substrates by pulsed laser deposition from a stoichiometric MgB2 target. Contrary to previous reports, anneals at 630 degree and a background of 2x10^(-4) torr Ar/4%H2 were performed without the requirement of Mg vapor or an Mg cap layer. This integration of superconducting MgB2 films on silicon may thus prove enabling in superconductor-semiconductor device applications. Images of surface morphology and cross-section profiles by scanning electron microscopy (SEM) show that the films have a uniform surface morphology and thickness. Energy dispersive spectroscopy (EDS) reveals these films were contaminated with oxygen, originating either from the growth environment or from sample exposure to air. The oxygen contamination may account for the low Tc for those in-situ annealed films, while the use of Si as the substrate does not result in a decrease in Tc as compared to other substrates.Comment: 5 pages, 4 figures, 15 references; due to file size limit, images were blure