Hopping conductivity in the quantum Hall effect -- revival of universal scaling

We have measured the temperature dependence of the conductivity $\sigma_{xx}$ of a two-dimensional electron system deep into the localized regime of the quantum Hall plateau transition. Using variable-range hopping theory we are able to extract directly the localization length $\xi$ from this experiment. We use our results to study the scaling behavior of $\xi$ as a function of the filling factor distance $|\delta \nu|$ to the critical point of the transition. We find for all samples a power-law behavior $\xi\propto|\delta\nu|^{-\gamma}$ with a universal scaling exponent $\gamma = 2.3$ as proposed theoretically

High Frequency Conductivity in the Quantum Hall Regime

We have measured the complex conductivity $\sigma_{xx}$ of a two-dimensional electron system in the quantum Hall regime up to frequencies of 6 GHz at electron temperatures below 100 mK. Using both its imaginary and real part we show that $\sigma_{xx}$ can be scaled to a single function for different frequencies and for all investigated transitions between plateaus in the quantum Hall effect. Additionally, the conductivity in the variable-range hopping regime is used for a direct evaluation of the localization length $\xi$. Even for large filing factor distances $\delta \nu$ from the critical point we find $\xi \propto \delta \nu^{-\gamma}$ with a scaling exponent $\gamma=2.3$

Conductance fluctuations at the quantum Hall plateau transition

We analyze the conductance fluctuations observed in the quantum Hall regime for a bulk two-dimensional electron system in a Corbino geometry. We find that characteristics like the power spectral density and the temperature dependence agree well with simple expectations for universal conductance fluctuations in metals, while the observed amplitude is reduced. In addition, the dephasing length $L_\Phi \propto T^{-1/2}$, which governs the temperature dependence of the fluctuations, is surprisingly different from the scaling length $L_{sc}\propto T^{-1}$ governing the width of the quantum Hall plateau transition

Specific Heat of a Fractional Quantum Hall System

Using a time-resolved phonon absorption technique, we have measured the specific heat of a two-dimensional electron system in the fractional quantum Hall effect regime. For filling factors $\nu = 5/3, 4/3, 2/3, 3/5, 4/7, 2/5$ and 1/3 the specific heat displays a strong exponential temperature dependence in agreement with excitations across a quasi-particle gap. At filling factor $\nu = 1/2$ we were able to measure the specific heat of a composite fermion system for the first time. The observed linear temperature dependence on temperature down to $T = 0.14$ K agrees well with early predictions for a Fermi liquid of composite fermions.Comment: 4 pages, 4 figures (version is 1. resubmission: Added a paragraph to include the problems which arise by the weak temperature dependence at \nu = 1/2, updated affiliation

Phonon emission and absorption in the fractional quantum Hall effect

We investigate the time dependent thermal relaxation of a two-dimensional electron system in the fractional quantum Hall regime where ballistic phonons are used to heat up the system to a non-equilibrium temperature. The thermal relaxation of a 2DES at $\nu=1/2$ can be described in terms of a broad band emission of phonons, with a temperature dependence proportional to $T^4$. In contrast, the relaxation at fractional filling $\nu=2/3$ is characterized by phonon emission around a single energy, the magneto-roton gap. This leads to a strongly reduced energy relaxation rate compared to $\nu=1/2$ with only a weak temperature dependence for temperatures 150 mK $< T <$ 400 mK.Comment: 4 pages, 3 figures; 14th International Conference on High Magnetic Fields in Semiconductor Physics, September 24-29, 2000, Matsue, Japa

Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples.Comment: 3 pages, 3 figure

Long-Term Efficacy and Safety of Chronic Globus Pallidus Internus Stimulation in Different Types of Primary Dystonia

Background: Deep brain stimulation (DBS) of the globus pallidus internus (GPi) offers a very promising therapy for medically intractable dystonia. However, little is known about the long-term benefit and safety of this procedure. We therefore performed a retrospective long-term analysis of 18 patients (age 12-78 years) suffering from primary generalized (9), segmental (6) or focal (3) dystonia (minimum follow-up: 36 months). Methods: Outcome was assessed using the Burke-Fahn-Marsden (BFM) scores (generalized dystonia) and the Tsui score (focal/segmental dystonia). Follow-up ranged between 37 and 90 months (mean 60 months). Results: Patients with generalized dystonia showed a mean improvement in the BFM movement score of 39.4% (range 0 68.8%), 42.5% (range -16.0 to 81.3%) and 46.8% (range-2.7 to 83.1%) at the 3- and 12-month, and long-term follow-up, respectively. In focal/ segmental dystonia, the mean reduction in the Tsui score was 36.8% (range 0-100%), 65.1% (range 16.7-100%) and 59.8% (range 16.7-100%) at the 3- and 12-month, and long-term follow-up, respectively. Local infections were noted in 2 patients and hardware problems (electrode dislocation and breakage of the extension cable) in 1 patient. Conclusion: Our data showed Gpi-DBS to offer a very effective and safe therapy for different kinds of primary dystonia, with a significant long-term benefit in the majority of cases. Copyright (c) 2008 S. Karger AG, Base

High frequency conductivity in the quantum Hall effect

We present high frequency measurements of the diagonal conductivity sigma_xx of a two dimensional electron system in the integer quantum Hall regime. The width of the sigma_xx peaks between QHE minima is analyzed within the framework of scaling theory using both temperature T=100-700 mK and frequency f <= 6 GHz in a two parameter scaling ansatz. For the plateau transition width we find scaling behaviour for both its temperature dependence as well as its frequency dependence. However, the corresponding scaling exponent for temperature kappa=0.42 significantly differs from the one deduced for frequency scaling (c=0.6). Additionally we use the high frequency experiments to suppress the contact resistances that strongly influences DC measurements. We find an intrinsic critical conductivity sigma_c=0.17e^2/h, virtually independent of temperature and filling factor, and deviating significantly from the proposed universal value 0.5e^2/h.Comment: Proceedings of the '14th international conference on high magnetic fields in semiconductor physics' (Semimag-2000) in Matsue, Japa