2D Face Recognition System Based on Selected Gabor Filters and Linear Discriminant Analysis LDA

We present a new approach for face recognition system. The method is based on 2D face image features using subset of non-correlated and Orthogonal Gabor Filters instead of using the whole Gabor Filter Bank, then compressing the output feature vector using Linear Discriminant Analysis (LDA). The face image has been enhanced using multi stage image processing technique to normalize it and compensate for illumination variation. Experimental results show that the proposed system is effective for both dimension reduction and good recognition performance when compared to the complete Gabor filter bank. The system has been tested using CASIA, ORL and Cropped YaleB 2D face images Databases and achieved average recognition rate of 98.9 %

Exact Traveling Wave Solutions of Nonlinear PDEs in Mathematical Physics Using the Modified Simple Equation Method

In this article, we apply the modified simple equation method to find the exact solutions with parameters of the (1+1)-dimensional nonlinear Burgers-Huxley equation, the (2+1) dimensional cubic nonlinear Klein-Gordon equation and the (2+1)-dimensional nonlinear Kadomtsev- Petviashvili-Benjamin-Bona-Mahony (KP-BBM) equation. The new exact solutions of these three equations are obtained. When these parameters are given special values, the solitary solutions are obtained

Melting and Solidification Study of As-Deposited and Recrystallized Bi Thin Films

Melting and solidification of as-deposited and recrystallized Bi crystallites, deposited on highly oriented 002-graphite at 423 K, were studied using reflection high-energy electron diffraction (RHEED). Films with mean thickness between 1.5 and 33 ML (monolayers) were studied. Ex situ atomic force microscopy was used to study the morphology and the size distribution of the formed nanocrystals. The as-deposited films grew in the form of three-dimensional crystallites with different shapes and sizes, while those recrystallized from the melt were formed in nearly similar shapes but different sizes. The change in the RHEED pattern with temperature was used to probe the melting and solidification of the crystallites. Melting started at temperatures below the bulk melting point of Bi, T0=544.5 K, and extended over a temperature range that depended on the size distribution of the crystallites. The as-deposited 1.5 ML film started to melt at T0-50 K and melted completely at T0-20 K. For films with higher coverage, the size distribution was observed to spread over a wider range with a larger mean value, resulting in a shift in the melting temperature range towards higher temperatures. Due to the shift in size distribution to higher values upon recrystallization, the recrystallized Bi crystallites showed a melting temperature range higher than that of the as-deposited crystallites. For the investigated conditions, all films were completely melted below or at T 0 of Bi. The characteristic film melting point, defined as the temperature at which the film melting rate with temperature is the fastest, showed a linear dependence on the reciprocal of the average crystallite radius, consistent with theoretical models. Of these models, the surface-phonon instability model best fits the obtained results. During solidification, the Bi films showed high amount of supercooling relative to T0 of Bi. The amount of liquid supercooling was found to decrease linearly with the reciprocal of the average crystallite size. © 2006 American Institute of Physics. [DOI: 10.1063/1.2208551

Condensation on (002) Graphite of Liquid Bismuth Far Below Its Bulk Melting Point

Condensation of thermally evaporated Bi on (002) graphite, at temperatures of 300-523K, was studied using in situ reflection high-energy electron diffraction (RHEED) and room temperature ex situ atomic force microscopy (AFM). For deposition at temperatures below 415±5K, transmission RHEED patterns of Bi appeared at an average thickness of ∼0.5 monolayer (ML). AFM images showed that the film consisted of crystallites in the shape of triangular step pyramids with step heights corresponding to single and double Bi layers in the [111] direction. This morphology indicates crystallization from the vapor. For deposition at higher temperatures, diffuse RHEED patterns appeared independent of the deposited thickness. When these films were cooled, clear transmission patterns of crystalline Bi appeared. After cooling to near room temperature, the melting and solidification behaviors of these films were investigated with RHEED. Upon subsequent heating, the topmost layers of the probed Bi crystallites started to lose long-range order at ∼10-15K below the Bi bulk melting point, T0=544.52K. When crystallized from the melt, supercooling by ∼125K below T0 was observed. These results indicate that Bi condensed on graphite in the form of supercooled liquid droplets when the graphite temperature was above 419K (T0-125). Below that temperature, Bi condensed in the solid phase. Bi films crystallized by cooling the liquid had crystal morphologies that depended on the degree of liquid supercooling. © 2005 The American Physical Society

Izrada i značajke tankih polikristaliničnih hetero-spojeva n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2

CuGa0.3In0.7Se2 polycrystalline thin films were prepared by thermal evaporation under vacuum of about 10-4Pa, with a deposition rate of about 200 nm/min. The selenization of these films at 723 K improves their properties. The activation energy as well as the optical energy gap of the investigated samples decreased with annealing and selenization. Polycrystalline thin film n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 heterojunctions were fabricated and the current density - voltage and capacitance - voltage characteristics of the junction were studied. The heterojunctions were exposed to light, and under illumination of 1000 mWcm-2, the open circuit voltage was 580 mV, the short circuit current density 4.8 mAcm-2, the fill factor 0.682 and the electrical conversion efficiency was 1.898% for cells of active area of 1 cm2.Tanke polikristalinične slojeve CuGa0.3In0.7Se2 pripremali smo naparavanjem u vakuumu oko 10−4 Pa, brzinom polaganja oko 200 nm/min. Seleniranje tih slojeva na 723 K poboljšava im svojstva. Aktivacijska energija i optički energijski procijep smanjuju se opuštanjem i seleniranjem. Pripremali smo i polikristalinične tankoslojne hetero-spojeve n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 i proučavali njihova značajke: gustoća struje – napon i kapacitet – napon. Ćelije ploštine 1 cm2 heterospojeva osvijetlili smo svjetlošću jakosti 1000 mW/cm2 i izmjerili napon otvorenog kruga od 580 mV, gustoću struje kratkog spoja 4.8 mAcm−2 , faktor punjenja 0.682 i učinkovitost pretvorbe 1.898%

FORMULATION AND EVALUATION OF FLURBIPROFEN SUSTAINED RELEASE MATRIX TABLETS USING AN ALTERNATIVE TECHNIQUE AS POTENTIAL ECONOMIC APPROACH

Objective: Development of sustained released tablets of flurbiprofen (FP) using an alternative technique to the traditional method of wet granulation process aiming to lower labor cost of the granulation process and formulating tablets with better characteristics. Methods: Eight matrix tablets formulae of FP were prepared by the alternative technique. The various characteristics of FP prepared tablets were investigated and comparatively evaluated by FP tablets prepared by the traditional method. The release data was analyzed according to various kinetic equations. The ulcerogenic effects of some FP tablets formulae were evaluated. Results: FP tablets prepared by the alternative technique displayed the best physical characteristics. All FP prepared tablets displayed good sustained-release patterns. FP tablets prepared by the traditional method showed a progress decrease in drug dissolution by increasing matrix concentration and hence, more matrix agent or multiple granulations was needed which makes granulation process to be difficult and cost. While, FP tablets prepared by the alternative technique displayed dissolution profiles with minimal differences in-between reflecting the low labor cost of granulation process where good sustained patterns could be obtained by a minor of the matrix agent. Histologically, the ulcerogenic effects of FP on the rats were highly reduced by FP tablets prepared by the alternative technique rather than others. The release kinetics of different prepared FP tablets displayed a coupled release pattern between diffusion and dissolution. Conclusion: This work proved the potential of the alternative technique as an effective economic approach for formulating FP sustained released tablets with better characteristics and low labor cost

Izrada i značajke tankih polikristaliničnih hetero-spojeva n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2

CuGa0.3In0.7Se2 polycrystalline thin films were prepared by thermal evaporation under vacuum of about 10-4Pa, with a deposition rate of about 200 nm/min. The selenization of these films at 723 K improves their properties. The activation energy as well as the optical energy gap of the investigated samples decreased with annealing and selenization. Polycrystalline thin film n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 heterojunctions were fabricated and the current density - voltage and capacitance - voltage characteristics of the junction were studied. The heterojunctions were exposed to light, and under illumination of 1000 mWcm-2, the open circuit voltage was 580 mV, the short circuit current density 4.8 mAcm-2, the fill factor 0.682 and the electrical conversion efficiency was 1.898% for cells of active area of 1 cm2.Tanke polikristalinične slojeve CuGa0.3In0.7Se2 pripremali smo naparavanjem u vakuumu oko 10−4 Pa, brzinom polaganja oko 200 nm/min. Seleniranje tih slojeva na 723 K poboljšava im svojstva. Aktivacijska energija i optički energijski procijep smanjuju se opuštanjem i seleniranjem. Pripremali smo i polikristalinične tankoslojne hetero-spojeve n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 i proučavali njihova značajke: gustoća struje – napon i kapacitet – napon. Ćelije ploštine 1 cm2 heterospojeva osvijetlili smo svjetlošću jakosti 1000 mW/cm2 i izmjerili napon otvorenog kruga od 580 mV, gustoću struje kratkog spoja 4.8 mAcm−2 , faktor punjenja 0.682 i učinkovitost pretvorbe 1.898%