Cathodoluminescence characterization of Ge-doped CdTe crystals

Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions