68 research outputs found
Gamma–ray spectroscopy with single–carrier collection in high–resistivity semiconductors
With the standard plane–parallel configuration of semiconductor detectors, good γ–ray spectra can only be obtained when both electrons and holes are completely collected. We show by calculations (and experiments) that with contacts of hemispherical configuration one can obtain γ–ray spectra of adequate resolution and with signal heights of nearly full amplitude even when only one type of carrier is collected. Experiments with CdTe detectors for which the µτ product for electrons is about 10^(3) times that of the holes confirm these calculations. The adoption of hemispherical contacts thus widens the range of high–resistivity semiconductors potentially acceptable for γ–ray detection at room temperature
Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals
The process of annealing of a CdTe:Cl ingot during its cooling after growth
was studied. The annealing was performed in two stages: a high-temperature
stage, with an approximate equality of chlorine and cadmium vacancy
concentrations established at the thermodynamic equilibrium between the crystal
and vapors of volatile components, and a low-temperature stage, with charged
defects interacting to form neutral associations. The chlorine concentrations
necessary to obtain semi-insulating crystals were determined for various ingot
cooling rates in the high temperature stage. The dependence of the chlorine
concentration [Cl+Te] in the ingot on the temperature of annealing in the
high-temperature stage was found. The carrier lifetimes and drift mobilities
were obtained in relation to the temperature and cadmium vapor pressure in the
postgrowth annealing of the ingot.Comment: 6 pages, 6 figure
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