High-Frequency (> 100 GHz) and High-Speed (< 10 ps) Electronic Devices

Contains an introduction, reports on four research projects and a list of publications.Defense Advanced Research Projects Agency Contract MDA972-90-C-0021National Aeronautics and Space Administration Grant NAGW-4691National Aeronautics and Space Administration Grant 959705National Science Foundation Grant AST 94-23608National Science Foundation/MRSEC Grant DMR 94-00334MIT Lincoln Laboratory Advanced Concept Program Grant BX-5464U.S. Army Research Office Grant DAAH04-95-1-0610Hertz Foundation FellowshipU.S. Army - Office of Scientific Research Grant DAAH04-94-G-016

High-Frequency (>100 GHz) and High-Speed (<1 ps) Electronic Devices

Contains an introduction, reports on three research projects and a list of publications.Advanced Research Projects Agency Contract MDA972-90-C-0021National Aeronautics and Space Administration Grant NAG2-693National Aeronautics and Space Administration Contract 959705National Science Foundation/MRSEC Grant DMR 94-00334MIT Lincoln Laboratory Advanced Concept Program Contract BX-5464MIT Research Laboratory of Electronics Postdoctoral FellowshipRome Air Force Laboratory Graduate FellowshipU.S. Army Research Office Grant DAAL03-92-G-0251Hertz Foundation FellowshipU.S. Army Research Office/ASSERT Grant DAAH04-94-G-016

A 1V 3.8-5.7 GHz differentially-tuned VCO in SOI CMOS

A 1 V 3.8-5.7 GHz VCO was designed and fabricated in a 0.13 μm SOI CMOS process. This VCO features differentially-tuned accumulation MOS varactors that (a) provides 40% frequency tuning when biased between 0 to 1 V, and (b) rejects common-mode noise such as flicker noise. At 1 MHz offset, the phase noise is -121.67 dBc/Hz at 3.8 GHz, and -111.67 dBc/Hz at 5.7 GHz. The power dissipation is between 2.3 to 2.7 mW depending on the centre frequency. When VDD is reduced to 0.75 V, the VCO only dissipates 0.8 mW at 5.5 GHz

A 40 GHz VCO with 9 to 15% tuning range in 0.13μm SOI CMOS

A 40 GHz fully-monolithic complementary VCO fabricated in IBM 0.13 μm partially-depleted SOI CMOS technology is reported. The VCO operates at 1.5 V supply and draws 11.25 mW of power. The measured phase noise at 40 GHz is -109 dBc/Hz at 4 MHz offset from the carrier. At 1.5 V and 2 V VDD, the tuning range is 9% and 15% respectively, and the output power is -8 dBm and -5 dBm respectively. The VCO occupies a chip area of only 100 μm by 100 μm

A low-voltage multi-GHz VCO with 58% tuning range in SOI CMOS

A low-voltage 3.0-5.6 GHz VCO was designed and fabricated in an 0.13 μm SOI CMOS process. This VCO features a single-loop horseshoe-shaped inductor and an array of band-switching accumulation MOS (AMOS) varactors. This results in good phase noise and wide tuning range of 58.7% when tuned between 0 to 1.4 V. At a I V supply (VDD) and 1 MHz offset, the phase noise is -120 dBc/Hz at 3.0 GHz, and -114.5 dBc/Hz at 5.6 GHz. The power dissipation is between 2 and 3 mW across the whole tuning range. The buffered output power is -7 dBm. When VDD is reduced to 0.83 V, the VCO dissipates less than 1 mW at 5.6 GHz

A 1-V 3.8-5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology

In this paper, a 1-V 3.8-5.7-GHz wide-band voltage-controlled oscillator (VCO) in a 0.13-μm silicon-on-insulator (SOI) CMOS process is presented. This VCO features differentially tuned accumulation MOS varactors that: 1) provide 40% frequency tuning when biased between 0-1 V and 2) diminish the adverse effect of high varactor sensitivity through rejection of common-mode noise. This paper shows that, for differential LC VCOs, all low-frequency noise such as flicker noise can be considered to be common-mode noise, and differentially tuned varactors can be used to suppress common-mode noise from being upconverted to the carrier frequency. The noise rejection mechanism is explained, and the technological advantages of SOI over bulk CMOS in this regard is discussed. At 1-MHz offset, the measured phase noise

Design of wide-band CMOS VCO for multiband wireless LAN applications

In this paper, a general design methodology of low-voltage wide-band voltage-controlled oscillator (VCO) suitable for wireless LAN (WLAN) application is described. The applications of high-quality passives for the resonator are introduced: 1) a single-loop horseshoe inductor with Q > 20 between 2 and 5 GHz [1] for good phase noise performance; and 2) accumulation MOS (AMOS) varactors with Cmax/Cmin ratio of 6 [2] to provide wide-band tuning capability at low-voltage supply. The adverse effect of AMOS varactors due to high sensitivity is examined. Amendment using bandswitching topology is suggested, and a phase noise improvement of 7 dB is measured to prove the concept. The measured VCO operates on a 1-V supply with a wide tuning range of 58.7% between 3.0 and 5.6 GHz when tuned between ±0.7 V. The pha

A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology

The design of a low-voltage 40-GHz complementary voltage-controlled oscillator (VCO) with 15% frequency tuning range fabricated in 0.13-μm partially depleted silicon-on-insulator (SOI) CMOS technology is reported. Technological advantages of SOI over bulk CMOS are demonstrated, and the accumulation MOS (AMOS) varactor limitations on frequency tuning range are addressed. At 1.5-V supply, the VCO core and each output buffer consumes 11.25 mW and 3 mW of power, respectively. The measured phase noise at 40-GHz is - 109.73 dBc/Hz at 4-MHz offset from the carrier, and the output power is -8 dBm. VCO performance using high resistivity substrate (∼300-Ω·cm) has the sam

High-Frequency (>100 GHz) and High-Speed (<10 ps) Electronic Devices

Contains an introduction, reports on four research projects and a list of publications.National Aeronautics and Space Administration Grant NAGW-4691National Science Foundation Grant AST 94-23608U.S. Army Research Laboratory/Federated Laboratory Grant QK-8819National Science Foundation/MRSEC Grant DMR 94-00334U.S. Army Research Office Grant DAAH04-95-1-0610Federated Laboratory Grant QK-8819Hertz Foundation FellowshipU.S. Army Research Office/AASERT Grant DAAH04-94-G-016