Predicting and Controlling Fertility Using Family Planning Methods

Without a real reduction in population fertility rates, developing societies will push for more spending on their infrastructure and more demand for basic services for new-born, and more dependency and crowding, and the attendant ills and various social, economic and cultural problems, which will push these countries towards Directing a large part (if not most) of development revenues to meet the growing population. In general, the importance of this study lies in how to predict fertility rates using the rates of family planning methods (practice rates, years of protection) and to identify the method of neural networks and its accuracy in dealing with fertility data in particular. The study concluded that the prevalence of family planning methods (PR) and protection rate (CYP) are used to estimate and predict the total fertility rate (TFR) very efficiently, and artificial neu6ral networks have reached a high rate and high accuracy in estimating and predicting the total fertility rate (TFR) is highly and reliable (99.6%)

Recent Advances in Dynamic Homojunction PIN Diodes Based on 2D Materials

Abstract The development of electrical and optoelectronic devices that are based on transition metal dichalcogenides require the fabrication of high‐quality homogeneous junctions. This paper demonstrates how to accomplish this using a lateral or vertical 2D material‐based p‐type/intrinsic/n‐type (p–i–n) homojunction. The capacitance across the junction is reduced, which is a result of the continuous band alignments, and there is less carrier entrapment at the homointerface. Various types of p–i–n diodes are examined in order to demonstrate the current modes of transportation and the optoelectronic effects. This review demonstrates how to make a high‐performance homointerface as well as describes the tunneling process in detail, which will be useful in the future development of new electrical and optoelectronic devices. A performance comparison of different parameters is also performed among various doping strategies in order to form homogenous junctions. It is assumed that this summary of the current research on nanomaterials will help 2D materials be used in order to make reliable p–i–n homojunction diodes for low‐power and high‐speed electronics. Finally, this paper concludes by summarizing the current challenges and the current prospects