The Mass-Metallicity and Luminosity-Metallicity Relation from DEEP2 at z ~ 0.8

We present the mass-metallicity (MZ) and luminosity-metallicity (LZ) relations at z ~ 0.8 from ~1350 galaxies in the Deep Extragalactic Evolutionary Probe 2 (DEEP2) survey. We determine stellar masses by fitting the spectral energy distribution inferred from photometry with current stellar population synthesis models. This work raises the number of galaxies with metallicities at z ~ 0.8 by more than an order of magnitude. We investigate the evolution in the MZ and LZ relations in comparison with local MZ and LZ relations determined in a consistent manner using ~21,000 galaxies in the Sloan Digital Sky Survey. We show that high stellar mass galaxies (log(M/M_solar)~10.6) at z ~ 0.8 have attained the chemical enrichment seen in the local universe, while lower stellar mass galaxies (log(M/M_solar)~9.2) at z ~ 0.8 have lower metallicities (Delta log(O/H)~0.15 dex) than galaxies at the same stellar mass in the local universe. We find that the LZ relation evolves in both metallicity and B-band luminosity between z ~ 0.8 and z~ 0, with the B-band luminosity evolving as a function of stellar mass. We emphasize that the B-band luminosity should not be used as a proxy for stellar mass in chemical evolution studies of star-forming galaxies. Our study shows that both the metallicity evolution and the B-band luminosity evolution for emission-line galaxies between the epochs are a function of stellar mass, consistent with the cosmic downsizing scenario of galaxy evolution.Comment: Accepted Version: 18 pages, 13 figure

Multiplet resonance lifetimes in resonant inelastic X-ray scattering involving shallow core levels

Resonant inelastic X-ray scattering (RIXS) spectra of model copper- and nickel-based transition metal oxides are measured over a wide range of energies near the M-edge (h$\nu$=60-80eV) to better understand the properties of resonant scattering involving shallow core levels. Standard multiplet RIXS calculations are found to deviate significantly from the observed spectra. However, by incorporating the self consistently calculated decay lifetime for each intermediate resonance state within a given resonance edge, we obtain dramatically improved agreement between data and theory. Our results suggest that these textured lifetime corrections can enable a quantitative correspondence between first principles predictions and RIXS data on model multiplet systems. This accurate model is also used to analyze resonant elastic scattering, which displays the elastic Fano effect and provides a rough upper bound for the core hole shake-up response time.Comment: 6 pages, 3 figure

\u3cem\u3eColloquium\u3c/em\u3e: Topological Insulators

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducted states on their edge or surface. These states are possible due to the combination of spin-orbit interactions and time-reversal symmetry. The two-dimensional (2D) topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A three-dimensional (3D) topological insulator supports novel spin-polarized 2D Dirac fermions on its surface. In this Colloquium the theoretical foundation for topological insulators and superconductors is reviewed and recent experiments are described in which the signatures of topological insulators have been observed. Transport experiments on HgTe/CdTe quantum wells are described that demonstrate the existence of the edge states predicted for teh quantum spin hall insulator. Experiments on Bi1-xSbx, Bi\u3c2Se3, Bi2Te3 and Sb2Te3 are then discussed that establish these materials as 3D topological insulators and directly probe the topology of their surface states. Exotic states are described that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions and may provide a new venue for realizing proposals for topological quantum computation. Prospects for observing these exotic states are also discussed, as well as other potential device applications of topological insulators

Quantum master equation scheme of time-dependent density functional theory to time-dependent transport in nano-electronic devices

In this work a practical scheme is developed for the first-principles study of time-dependent quantum transport. The basic idea is to combine the transport master-equation with the well-known time-dependent density functional theory. The key ingredients of this paper include: (i) the partitioning-free initial condition and the consideration of the time-dependent bias voltages which base our treatment on the Runge-Gross existence theorem; (ii) the non-Markovian master equation for the reduced (many-body) central system (i.e. the device); and (iii) the construction of Kohn-Sham master equation for the reduced single-particle density matrix, where a number of auxiliary functions are introduced and their equations of motion (EOM) are established based on the technique of spectral decomposition. As a result, starting with a well-defined initial state, the time-dependent transport current can be calculated simultaneously along the propagation of the Kohn-Sham master equation and the EOM of the auxiliary functions.Comment: 9 pages, no figure

Direct tunneling through high-κ\kappa amorphous HfO2_2: effects of chemical modification

We report first principles modeling of quantum tunneling through amorphous HfO$_2$ dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO$_2$/Al. In particular we predict that chemically modifying the amorphous HfO$_2$ barrier by doping N and Al atoms in the middle region - far from the two interfaces of the MOS structure, can reduce the gate-to-channel tunnel leakage by more than one order of magnitude. Several other types of modification are found to enhance tunneling or induce substantial band bending in the Si, both are not desired from leakage point of view. By analyzing transmission coefficients and projected density of states, the microscopic physics of electron traversing the tunnel barrier with or without impurity atoms in the high-$\kappa$ dielectric is revealed.Comment: 5 pages, 5 figure