Single-photon emitting diode in silicon carbide

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide (SiC) an ideal material to build such devices. Here, we demonstrate the fabrication of bright single photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of $>$300 kHz), and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single photon source is proposed. These results provide a foundation for the large scale integration of single photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.Comment: Main: 10 pages, 6 figures. Supplementary Information: 6 pages, 6 figure

Quantum-confined single photon emission at room temperature from SiC tetrapods

Controlled engineering of isolated solid state quantum systems is one of the most prominent goals in modern nanotechnology. In this letter we demonstrate a previously unknown quantum system namely silicon carbide tetrapods. The tetrapods have a cubic polytype core (3C) and hexagonal polytype legs (4H)-a geometry that creates spontaneous polarization within a single tetrapod. Modeling of the tetrapod structures predicts that a bound exciton should exist at the 3C-4H interface. The simulations are confirmed by the observation of fully polarized and narrowband single photon emission from the tetrapods at room temperature. The single photon emission provides important insights into understanding the quantum confinement effects in non-spherical nanostructures. Our results pave the way to a new class of crystal phase nanomaterials that exhibit single photon emission at room temperature and therefore are suitable for sensing, quantum information and nanophotonics. © 2014 the Partner Organisations

SCHOOL PROBLEMS IN THE EDUCATION AND DEVELOPMENT OF GIFTED CHILDREN: PSYCHOLOGICAL ASPECT

Purpose of the Study: The urgency of the problem under investigation is because, the issue of gifted students’ education is one of the most difficult and interesting aspects of contemporary pedagogy. The purpose of the article is to identify the psychological characteristics of the gifted students’ development. In this article, the school difficulties of gifted students are revealed and the causes of internal and external nature are analyzed. Methodology: The leading approach to the study of this problem is a method of a theoretical analysis and synthesis of social, political, and psycho-pedagogical literature. Results: The main result of the study is a theoretical analysis of the relationship between learning and the development of gifted children and their psychological characteristics. Application:The materials of the article can be useful for teachers, students, and a wide range of readers interested in the problems of gifted students’ education. The authors pay special attention to the social and emotional consequences, which can be rather destructive if appropriate assistance is not provided by teachers, psychologists, and parents

SCHOOL PROBLEMS IN THE EDUCATION AND DEVELOPMENT OF GIFTED CHILDREN: PSYCHOLOGICAL ASPECT

Purpose of the Study: The urgency of the problem under investigation is due to the fact that the issue of gifted students’ education is one of the most difficult and interesting aspects of contemporary pedagogy. The purpose of the article is to identify the psychological characteristics of the gifted students’ development. In this article, the school difficulties of gifted students are revealed and the causes of internal and external nature are analyzed. The authors pay special attention to the social and emotional consequences, which can be rather destructive if appropriate assistance is not provided by teachers, psychologists, and parents. Methodology: The leading approach to the study of this problem is a method of theoretical analysis and synthesis of social, political and psycho-pedagogical literature. Results: The main result of the study is a theoretical analysis of the relationship between learning and the development of gifted children and their psychological characteristics. Application: The materials of the article can be useful for teachers, students and a wide range of readers interested in the problems of gifted students’ education

A novel rapid-onset high-penetrance plasmacytoma mouse model driven by deregulation of cMYC cooperating with KRAS12V in BALB/c mice

Our goal is to develop a rapid and scalable system for functionally evaluating deregulated genes in multiple myeloma (MM). Here, we forcibly expressed human cMYC and KRAS12V in mouse T2 B cells (IgM+B220+CD38+IgD+) using retroviral transduction and transplanted these cells into lethally irradiated recipient mice. Recipients developed plasmacytomas with short onset (70 days) and high penetrance, whereas neither cMYC nor KRAS12V alone induced disease in recipient mice. Tumor cell morphology and cell surface biomarkers (CD138+B220−IgM−GFP+) indicate a plasma cell neoplasm. Gene set enrichment analysis further confirms that the tumor cells have a plasma cell gene expression signature. Plasmacytoma cells infiltrated multiple loci in the bone marrow, spleen and liver; secreted immunoglobulins; and caused glomerular damage. Our findings therefore demonstrate that deregulated expression of cMYC with KRAS12V in T2 B cells rapidly generates a plasma cell disease in mice, suggesting utility of this model both to elucidate molecular pathogenesis and to validate novel targeted therapies

Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study

A systematic study of the level positions of intrinsic and carbon defects in SiO2 is presented, based on density functional calculations with a hybrid functional in an alpha-quartz supercell. The results are analyzed from the point of view of the near interface traps (NIT), observed in both SiC/SiO2 and Si/SiO2 systems, and assumed to have their origins in the oxide. It is shown that the vacancies and the oxygen interstitial can be excluded as the origin of such NIT, while the silicon interstitial and carbon dimers give rise to gap levels in the energy range inferred from experiments. The properties of these defects are discussed in light of the knowledge about the SiC/SiO2 interface

Band transport by large Fröhlich polarons in MXenes

MXenes are emerging layered materials that are promising for electrochemical energy storage and (opto-)electronic applications. A fundamental understanding of charge transport in MXenes is essential for such applications, but has remained under debate. While theoretical studies pointed to efficient band transport, device measurements have revealed thermally activated, hopping-type transport. Here we present a unifying picture of charge transport in two model MXenes by combining ultrafast terahertz and static electrical transport measurements to distinguish the short- and long-range transport characteristics. We find that band-like transport dominates short-range, intra-flake charge conduction in MXenes, whereas long-range, inter-flake transport occurs through thermally activated hopping, and limits charge percolation across the MXene flakes. Our analysis of the intra-flake charge carrier scattering rate shows that it is dominated by scattering from longitudinal optical phonons with a small coupling constant (α ≈ 1), for both semiconducting and metallic MXenes. This indicates the formation of large polarons in MXenes. Our work therefore provides insight into the polaronic nature of free charges in MXenes, and unveils intra- and inter-flake transport mechanisms in the MXene materials, which are relevant for both fundamental studies and applications

Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study

Ab initio calculations in the local-density approximation have been carried out in SiC to determine the possible configurations of the isolated oxygen impurity. Equilibrium geometry and occupation levels were calculated. Substitutional oxygen in 3C-SiC is a relatively shallow effective mass like double donor on the carbon site (O-C) and a hyperdeep double donor on the Si site (O-Si). In 4H-SiC O-C is still a double donor but with a more localized electron state. In 3C-SiC O-C is substantially more stable under any condition than O-Si or interstitial oxygen (O-i). In 4H-SiC O-C is also the most stable one except for heavy n-type doping. We propose that O-C is at the core of the electrically active oxygen-related defect family found by deep level transient spectroscopy in 4H-SiC. The consequences of the site preference of oxygen on the SiC/SiO2 interface are discussed

Identification of the binding site between bovine serum albumin and ultrasmall SiC fluorescent biomarkers

Ultrasmall silicon carbide nanoparticles (SiC USNPs) are very promising biomarkers for developing new applications in diagnostics, cell monitoring or drug delivery, even though their interaction with biological molecules such as different proteins has not yet been investigated in detail. In this study, the biological behaviour of SiC USNPs in a medium modeling a living organism was investigated in detail through the dependence of the fluorescence on interactions between bovine serum albumin (BSA) and SiC USNPs. The interaction shows transient nanoparticle–protein associations due to the restricted diffusion behaviour of the nanoparticles in the vicinity of a protein. The transient association manifests in a complex fluorescence quenching mechanism where the dynamic component was dominated by Fo¨rster resonance energy transfer. By studying SiC nanoparticles of different sizes, it can be concluded that the transient effect is an ultrasmall nanoparticle behaviour

Effect of hydrogen on ground state structures of small silicon clusters

We present results for ground state structures of small Si$_{n}$H (2 \leq \emph{n} \leq 10) clusters using the Car-Parrinello molecular dynamics. In particular, we focus on how the addition of a hydrogen atom affects the ground state geometry, total energy and the first excited electronic level gap of an Si$_{n}$ cluster. We discuss the nature of bonding of hydrogen in these clusters. We find that hydrogen bonds with two silicon atoms only in Si$_{2}$H, Si$_{3}$H and Si$_{5}$H clusters, while in other clusters (i.e. Si$_{4}$H, Si$_{6}$H, Si$_{7}$H, Si$_{8}$H, Si$_{9}$H and Si$_{10}$H) hydrogen is bonded to only one silicon atom. Also in the case of a compact and closed silicon cluster hydrogen bonds to the cluster from outside. We find that the first excited electronic level gap of Si$_{n}$ and Si$_{n}$H fluctuates as a function of size and this may provide a first principles basis for the short-range potential fluctuations in hydrogenated amorphous silicon. Our results show that the addition of a single hydrogen can cause large changes in the electronic structure of a silicon cluster, though the geometry is not much affected. Our calculation of the lowest energy fragmentation products of Si$_{n}$H clusters shows that hydrogen is easily removed from Si$_{n}$H clusters.Comment: one latex file named script.tex including table and figure caption. Six postscript figure files. figure_1a.ps and figure_1b.ps are files representing Fig. 1 in the main tex