Stochastic Heterostructures in B/N-Doped Carbon Nanotubes

Carbon nanotubes are one-dimensional and very narrow. These obvious facts imply that under doping with boron and nitrogen, microscopic doping inhomogeneity is much more important than for bulk semiconductors. We consider the possibility of exploiting such fluctuations to create interesting devices. Using self-consistent tight-binding (SCTB), we study heavily doped highly compensated nanotubes, revealing the spontaneous formation of structures resembling chains of random quantum dots, or nano-scale diode-like elements in series. We also consider truly isolated impurities, revealing simple scaling properties of bound state sizes and energies.Comment: 4 pages RevTeX, 4 PostScript figure

Theoretical Study of One-dimensional Chains of Metal Atoms in Nanotubes

Using first-principles total-energy pseudopotential calculations, we have studied the properties of chains of potassium and aluminum in nanotubes. For BN tubes, there is little interaction between the metal chains and the tubes, and the conductivity of these tubes is through carriers located at the inner part of the tube. In contrast, for small radius carbon nanotubes, there are two types of interactions: charge-transfer (dominant for alkali atoms) leading to strong ionic cohesion, and hybridization (for multivalent metal atoms) resulting in a smaller cohesion. For Al-atomic chains in carbon tubes, we show that both effects contribute. New electronic properties related to these confined atomic chains of metal are analyzed.Comment: 12 pages + 3 figure

Electron-beam-induced substitutional carbon doping of boron nitride nanosheets, nanoribbons, and nanotubes

Substitutional carbon doping of the honeycomb-like boron nitride (BN) lattices in two-dimensional (nanosheets) and one-dimensional (nanoribbons and nanotubes) nanostructures was achieved via in situ electron beam irradiation in an energy-filtering 300 kV high-resolution transmission electron microscope using a C atoms feedstock intentionally introduced into the microscope. The C substitutions for B and N atoms in the honeycomb lattices were demonstrated through electron energy loss spectroscopy, spatially resolved energy-filtered elemental mapping, and in situ electrical measurements. The preferential doping was found to occur at the sites more vulnerable to electron beam irradiation. This transformed BN nanostructures from electrical insulators to conductors. It was shown that B and N atoms in a BN nanotube could be nearly completely replaced with C atoms via electron-beam-induced doping. The doping mechanism was proposed to rely on the knockout ejections of B and N atoms and subsequent healing of vacancies with supplying C atoms