4 research outputs found
Binarized neural network of diode array with high concordance to vectorâmatrix multiplication
Abstract In this study, a binarized neural network (BNN) of silicon diode arrays achieved vectorâmatrix multiplication (VMM) between the binarized weights and inputs in these arrays. The diodes that operate in a positive-feedback loop in their p+-n-p-n+ device structure possess steep switching and bistable characteristics with an extremely low subthreshold swing (below 1 mV) and a high current ratio (approximately 108). Moreover, the arrays show a self-rectifying functionality and an outstanding linearity by an R-squared value of 0.99986, which allows to compose a synaptic cell with a single diode. A 2âĂâ2 diode array can perform matrix multiply-accumulate operations for various binarized weight matrix cases with some input vectors, which is in high concordance with the VMM, owing to the high reliability and uniformity of the diodes. Moreover, the disturbance-free, nondestructive readout, and semi-permanent holding characteristics of the diode arrays support the feasibility of implementing the BNN
LogicâinâMemory Operation of Ternary NAND/NOR Universal Logic Gates using DoubleâGated Feedback FieldâEffect Transistors
Abstract In this study, the logicâinâmemory operations are demonstrated of ternary NAND and NOR logic gates consisting of doubleâgated feedback fieldâeffect transistors. The component transistors reconfigure their operation modes into nâ or pâchannel modes by adjusting the gate biases. The highly symmetrical operation between these operation modes with an excellent onâcurrent ratio of 1.03 enables three distinguishable and stable logic levels in the ternary logic gates. Moreover, the ternary logic gates maintain the three logic states for several tens to hundreds of seconds under zeroâbias condition. This study demonstrates that the ternary logic gates are promising candidates for nextâgeneration lowâpower computing systems
Reconfigurable LogicâInâMemory Cell Comprising TripleâGated Feedback FieldâEffect Transistors
Abstract A reconfigurable logicâinâmemory (RâLIM) cell performs logicâinâmemory functions as well as reconfigurable logic gates. The RâLIM cell is constructed with tripleâgated (TG) feedback fieldâeffect transistors (FBFETs) that are reconfigured in nâchannel or pâchannel modes via electrostatic doping. Each TG FBFET has one control gate electrode and two programâgate electrodes that determine the channel mode. Their reconfigurability enables the symmetrical operation of the nâchannel and pâchannel modes through an onâcurrent ratio of 1:04. Furthermore, the RâLIM cell performs eight Boolean logic operations, storing the logic outputs for â100Â s under zeroâbias conditions. The RâLIM cell is useful for developing inâmemory computing systems with high energy efficiency and functional logic
Bidirectional Synaptic Operations of TripleâGated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics
Abstract In this study, a tripleâgated transistor with a p+âiân+ silicon nanosheet (NS) is proposed as a single synaptic device, and bidirectional synaptic functions are realized using reconfigurable memory characteristics. The tripleâgated NS transistor features steep switching and bistable characteristics with a subthreshold swing below 5Â mVÂ decâ1 and an ON/OFF current ratio of â5 Ă 106 for both the nâ and pâchannel modes. This transistor exhibits electrically symmetric reconfigurable memory characteristics with an ON current ratio of 1.02 for the nâ and pâchannel modes. Moreover, the bidirectional synaptic weight updates of binarized spikeâtimingâdependent plasticity learning are successfully performed in a single transistor. This study demonstrates the potential of a tripleâgated NS transistor for achieving compact synaptic arrays in largeâscale siliconâbased neuromorphic computing systems