Phonon transport in single-layer Boron nanoribbons

Inspired by the successful synthesis of several allotropes, boron sheets have been one of the hottest spot areas of focus in various fields. Here, we study phonon transport in three types of boron nanoribbons with zigzag and armchair edges by using a non-equilibrium Green's function combined with first principles methods. Diverse transport properties are found in the nanoribbons. At the room temperature, their highest thermal conductance can be comparable with that of graphene, while the lowest thermal conductance is less than half of graphene's. The three boron sheets exhibit different anisotropic transport characteristics. Two of these sheets have stronger phonon transport abilities along the zigzag edges than the armchair edges, while in the case of the third, the results are reversed. With the analysis of phonon dispersion, bonding charge density, and simplified models of atomic chains, the mechanisms of the diverse phonon properties are discussed. Because all boron allotropes consists of hexagonal and triangular rings, many hybrid patterns can be constructed naturally without doping, adsorption, and defects. Our results are useful in materials and devices design using boron sheets for thermal management

Coexistence of flat bands and Dirac bands in a carbon-Kagome-lattice family

The Dirac bands and flat bands are difficult to coexist because they represent two extreme ends of electronic properties. However, in this paper, we propose a carbon-Kagome-lattice (CKL) family based on first-principles calculations, and the coexistence of Dirac and flat bands are observed in this series of three-dimensional carbon structures. The flat bands are originated from the orbital interactions of the Kagome lattices, while the Dirac bands are related to the carbon zigzag chains. A tight-binding model is used to explain the various band structures in different CKLs. The coexistence of flat and Dirac bands around the Fermi level implies that CKL structures maybe can serve as superconductors. In addition, electronic properties of the thinnest CKL slabs, only consisting of benzene rings, are studied. Flat bands are found in the band spectra of the two-dimensional structures, and split into spin-up and spin-down bands because of strong correlated effect in the case of hole doping

Transition of thermal rectification in silicon nanocones

Current understanding of thermal rectification asserts that the rectification ratio (R), which measures the relative heat flux between two ends of a nanostructure, is determined by its geometric asymmetry. The higher the asymmetry, the higher the R. However, by using nonequilibrium molecular dynamics method we have calculated thermal transport in Si nanocones as an example, the results show that such an understanding may be incorrect and R may not increase monotonically with geometric asymmetry. Rather, R exhibits a sharp reverse when the vertex angle ({\theta}) of the nanocone is approximately 90{\deg}. In other words, when {\theta} > 90{\deg}, R decreases, rather than increasing. We show that this abnormal behavior is originated from a change in the thermal transport mechanism. At small {\theta}s, phonon transport is dominated by localized modes, especially for transport from tip to bottom. At large {\theta}s, however, these localized modes disappear, leading to R decrease.Comment: in Applied Thermal Engineering 201

Electron and phonon properties and gas storage in carbon honeycomb

A new kind of three-dimensional carbon allotropes, termed carbon honeycomb (CHC), has recently been synthesized [PRL 116, 055501 (2016)]. Based on the experimental results, a family of graphene networks are constructed, and their electronic and phonon properties are calculated by using first principles methods. All networks are porous metal with two types of electron transport channels along the honeycomb axis and they are isolated from each other: one type of channels is originated from the orbital interactions of the carbon zigzag chains and is topologically protected, while the other type of channels is from the straight lines of the carbon atoms that link the zigzag chains and is topologically trivial. The velocity of the electrons can reach ~10^6 m/s. Phonon transport in these allotropes is strongly anisotropic, and the thermal conductivities can be very low when compared with graphite by at least a factor of 15. Our calculations further indicate that these porous carbon networks possess high storage capacity for gaseous atoms and molecules in agreement with experiment.Comment: Nanoscale, 201

Nodal-chain network, intersecting nodal rings and triple points coexisting in nonsymmorphic Ba3Si4

Coexistence of topological elements in a topological metal/semimetal (TM) has gradually attracted attentions. However, the non-topological factors always mess up the Fermi surface and cover interesting topological properties. Here, we find that Ba3Si4 is a "clean" TM in which coexists nodal-chain network, intersecting nodal rings (INRs) and triple points, in the absence of spin-orbit coupling (SOC). Moreover, the nodal rings in the topological phase exhibit diverse types: from type-I, type-II to type-III rings according to band dispersions. All the topological elements are generated by crossings of three energy bands, and thus they are correlated rather than mutual independence. When some structural symmetries are eliminated by an external strain, the topological phase evolves into another phase including Hopf link, one-dimensional nodal chain and new INRs

Thermal transport in MoS2/Graphene hybrid nanosheets

Heat dissipation is a very critical problem for designing nano-functional devices, including MoS2/Graphene heterojunctions. In this paper we investigate thermal transport in MoS2/Graphene hybrid nanosheets under various heating conditions, by using molecular dynamics simulation. Diverse transport processes and characteristics, depending on the conducting layers, are found in these structures. The thermal conductivities can be tuned by interlayer coupling, environment temperature and interlayer overlap. The highest thermal conductivity at room temperature is achieved as more than 5 times of that of single layer MoS2 when both layers are heated and 100% overlapped. Different transport mechanisms in the hybrid nanosheets are explained by phonon density of states, temperature distribution, and ITR. Our results not only could provide clues to master the heat transport in functional devices based on MoS2/Graphene heterojunctions, but also are useful to analyze thermal transport in other van der Waals hybrid nanosheets

Double Kagome bands in a two-dimensional phosphorus carbide P2C3

The interesting properties of Kagome bands, consisting of Dirac bands and a flat band, have attracted extensive attention. However, the materials with only one Kagome band around the Fermi level cannot possess physical properties of Dirac fermions and strong correlated fermions simultaneously. Here, we propose a new type of band structure --- double Kagome bands, which can realize coexistence of the two kinds of fermions. Moreover, the new band structure is found to exist in a new two-dimensional material, phosphorus carbide P2C3. The carbide material shows good stability and unusual electronic properties. Strong magnetism appears in the structure by hole doping of the flat band, which results in spin splitting of the Dirac bands. The edge states induced by Dirac and flat bands coexist on the Fermi level, indicating outstanding transport characteristics. In addition, a possible route to experimentally grow P2C3 on some suitable substrates such as the Ag (111) surface is also discussed

Design triple points, nexus points and related topological phases by stacking monolayers

Triple points and nexus points are two interesting topological phases, which have been reported in some three-dimensional (3D) materials. Here, we propose that triple points, nexus points and related phases, such as topological tangle nodal lines, can be obtained by alternatively stacking two types of monolayers. Two conditions for the stacking monolayers are required: the first condition is that they have a three-fold (C3) rotation symmetry and three mirror planes along the C3 axis; the second condition is that one of the monolayers should be insulating while the other one should be metallic (or semiconducting) and has a double degenerate band and a nondegenerate band at {\Gamma}point around the Fermi level. Hexagonal boron nitride (HBN) and {\alpha}/{\alpha}^'-boron sheets ({\alpha}/{\alpha}^'-BS) are suggested as candidate materials. Even if HBN is a wide-gap insulator, the interactions between layers lead to crossings of the nondegenerate and double degenerate bands along the direction normal to the nanosheets, and thus form triple/nexus points or related phases. A tight-binding model is adopted to explain the phase transition between triple points, nexus points and other related phases

Geometry, stability and thermal transport of hydrogenated graphene nanoquilts

Geometry, stability, and thermal transport of graphene nanoquilts folded by hydrogenation are studied using molecular dynamics simulations. The hydrogenated graphene nanoquilts show increased thermodynamic stability and better transport properties than folded graphene structures without hydrogenation. For the two-fold graphene nanoquilt, both geometry and thermal conductivity are very sensitive to the adsorbed hydrogen chains, which is interpreted by the red-shift of PDOS. For the multi-fold nanoquilts, their thermal conductivities can be tuned from 100% to 15% of pristine graphene, by varying the periodic number or length. Our results demonstrated that the hydrogenated graphene nanoquilts are quite suitable to be thermal management devices

Versatile electronic properties and exotic edge states in single-layer tetragonal silicon carbides

Three single-layer tetragonal silicon carbides (SiC), termed as T1,T2 and T3, are proposed by density functional theory (DFT) computations. Although the three structures have the same topological geometry, they show versatile electronic properties from semiconductor (T1), semimetal (T2) to metal (T3).The versatile properties are originated from the rich bonds between Si and C atoms. The nanoribbons of the three SiC also show interesting electronic properties. Especially, T1 nanoribbons possess exotic edge states, where electrons only distribute on one edge's silicon or carbon atoms. The band gaps of the T1 nanoribbons are constant because of no interaction between the edge states