The Role of Starburst-AGN composites in Luminous Infrared Galaxy Mergers: Insights from the New Optical Classification Scheme

We investigate the fraction of starbursts, starburst-AGN composites, Seyferts, and LINERs as a function of infrared luminosity (L_IR) and merger progress for ~500 infrared-selected galaxies. Using the new optical classifications afforded by the extremely large data set of the Sloan Digital Sky Survey, we find that the fraction of LINERs in IR-selected samples is rare (< 5%) compared with other spectral types. The lack of strong infrared emission in LINERs is consistent with recent optical studies suggesting that LINERs contain AGN with lower accretion rates than in Seyfert galaxies. Most previously classified infrared-luminous LINERs are classified as starburst-AGN composite galaxies in the new scheme. Starburst-AGN composites appear to "bridge" the spectral evolution from starburst to AGN in ULIRGs. The relative strength of the AGN versus starburst activity shows a significant increase at high infrared luminosity. In ULIRGs (L_IR >10^12 L_odot), starburst-AGN composite galaxies dominate at early--intermediate stages of the merger, and AGN galaxies dominate during the final merger stages. Our results are consistent with models for IR-luminous galaxies where mergers of gas-rich spirals fuel both starburst and AGN, and where the AGN becomes increasingly dominant during the final merger stages of the most luminous infrared objects.Comment: 30 pages, 19 figures, 10 tables, ApJ accepte

Coexistence and competition of multiple charge-density-wave orders in rare-earth tri-telluride RTe3

The occurrences of collective quantum states, such as superconductivity (SC) and charge- or spin-densitywaves (CDWs or SDWs), are among the most fascinating phenomena in solids. To date much effort has been made to explore the interplay between different orders, yet little is known about the relationship of multiple orders of the same type. Here we report optical spectroscopy study on CDWs in the rare-earth tri-telluride compounds RTe3 (R = rare earth elements). Besides the prior reported two CDW orders, the study reveals unexpectedly the presence of a third CDW order in the series which evolves systematically with the size of R element. With increased chemical pressure, the first and third CDW orders are both substantially suppressed and compete with the second one by depleting the low energy spectral weight. A complete phase diagram for the multiple CDW orders in this series is established.Comment: 7 pages, 4 figures, 1 tabl

Optical spectroscopy study on CeTe3_3: evidence for multiple charge-density-wave orders

We performed optical spectroscopy measurement on single crystal of CeTe$_3$, a rare-earth element tri-telluride charge density wave (CDW) compound. The optical spectra are found to display very strong temperature dependence. Besides a large and pronounced CDW energy gap being present already at room temperature as observed in earlier studies, the present measurement revealed the formation of another energy gap at smaller energy scale at low temperature. The second CDW gap removes the electrons near E$_F$ which undergo stronger scattering. The study yields evidence for the presence of multiple CDW orders or strong fluctuations in the light rare-earth element tri-telluride.Comment: 5 figure

Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films

The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3--90 K. We found that the small-energy-transfer electron-electron ($e$-$e$) scattering process dominated the dephasing from a few K to several tens K. At higher temperatures, a crossover to the large-energy-transfer $e$-$e$ scattering process was observed. Below about 1--2 K, the dephasing time $\tau_\varphi$ revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant $D$, i.e., $\tau_\varphi (T \approx 0.3 \, {\rm K}) \propto 1/D$. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this low-carrier-concentration material is presented.Comment: 10 pages, 7 figure