AC Conductance in Dense Array of the Ge0.7_{0.7}Si0.3_{0.3} Quantum Dots in Si

Complex AC-conductance, $\sigma^{AC}$, in the systems with dense Ge$_{0.7}$Si$_{0.3}$ quantum dot (QD) arrays in Si has been determined from simultaneous measurements of attenuation, $\Delta\Gamma=\Gamma(H)-\Gamma(0)$, and velocity, $\Delta V /V=(V(H)-V(0)) / V(0)$, of surface acoustic waves (SAW) with frequencies $f$ = 30-300 MHz as functions of transverse magnetic field $H \leq$ 18 T in the temperature range $T$ = 1-20 K. It has been shown that in the sample with dopant (B) concentration 8.2$\times 10^{11}$ cm$^{-2}$ at temperatures $T \leq$4 K the AC conductivity is dominated by hopping between states localized in different QDs. The observed power-law temperature dependence, $\sigma_1(H=0)\propto T^{2.4}$, and weak frequency dependence, $\sigma_1(H=0)\propto \omega^0$, of the AC conductivity are consistent with predictions of the two-site model for AC hopping conductivity for the case of $\omega \tau_0 \gg$1, where $\omega=2\pi f$ is the SAW angular frequency and $\tau_0$ is the typical population relaxation time. At $T >$ 7 K the AC conductivity is due to thermal activation of the carriers (holes) to the mobility edge. In intermediate temperature region 4$< T<$ 7 K, where AC conductivity is due to a combination of hops between QDs and diffusion on the mobility edge, one succeeded to separate both contributions. Temperature dependence of hopping contribution to the conductivity above $T^*\sim$ 4.5 K saturates, evidencing crossover to the regime where $\omega \tau_0 <$1. From crossover condition, $\omega \tau_0(T^*)$ = 1, the typical value, $\tau_0$, of the relaxation time has been determined.Comment: revtex, 3 pages, 6 figure

Crystal structure of mixed fluorites Ca(1-x)Sr(x)F(2) and Sr(1-x)Ba(x)F(2) and luminescence of Eu(2+) in the crystals

Within the framework of the virtual crystal method implemented in the shell model and pair potential approximation the crystal structure of mixed fluorites Ca(1-x)Sr(x)F(2) and Sr(1-x)Ba(x)F(2) has been calculated. The impurity center Eu(2+) and the distance Eu(2+)-F in this crystals have been also calculated. The low level position of excited 4f65d configuration of the Eu(2+) ion has been expressed using phenomenological dependence on distance E(2+)-F. The dependences of Stokes shift and Huang-Rhys factor on concentration x have been received for yellow luminescence in Sr(1-x)Ba(x)F(2):Eu(2+). The value x, for which the eg -level of Eu(2+) ion will be in conduction band in Sr(1-x)Ba(x)F(2):Eu(2+) has been calculated.Comment: 8 pages, 3 figures. The manuscript is sent to journal 'Physics of the solid state'. The results will be submitted on inernational conference SCINTMAT'2002 in oral session (june,20-22,2002,Ekaterinburg,Russia). Corresponding author e-mail: [email protected]