9 research outputs found
Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three
monolayer thick AlAs central barrier have been investigated for different well
widths and Si doping levels. The transport parameters are determined by
resistivity measurements in the temperature range 4-300 K and magnetotransport
in magnetic fields up to 12 T. The (subband) carrier concentrations and
mobilities are extracted from the Hall data and Shubnikov-de Haas oscillations.
We find that the transport parameters are strongly affected by the insertion of
the AlAs central barrier. Photoluminescence spectra, measured at 77 K, show an
increase of the transition energies upon insertion of the barrier. The
transport and optical data are analyzed with help of self-consistent
calculations of the subband structure and envelope wave functions. Insertion of
the AlAs central barrier changes the spatial distribution of the electron wave
functions and leads to the formation of hybrid states, i.e. states which extend
over the InGaAs and the delta-doped layer quantum wells.Comment: 14 pages, pdf fil