The Nature of Thermopower in Bipolar Semiconductors

The thermoemf in bipolar semiconductors is calculated. It is shown that it is necessary to take into account the nonequilibrium distribution of electron and hole concentrations (Fermi quasilevels of the electrons and holes). We find that electron and hole electric conductivities of contacts of semiconductor samples with connecting wires make a substantial contribution to thermoemf.Comment: 17 pages, RevTeX 3.0 macro packag

New physical principles of contact thermoelectric cooling

We suggest a new approach to the theory of the contact thermoelectric cooling (Peltier effect). The metal-metal, metal-n-type semiconductor, metal-p-type semiconductor, p-n junction contacts are analyzed. Both degenerate and non-degenerate electron and hole gases are considered. The role of recombination in the contact cooling effect is discussed by the first time.Comment: 8 pages, 8 figures, revtex

Thermal Diffusion of a Two Layer System

In this paper thermal conductivity and thermal diffusivity of a two layer system is examined from the theoretical point of view. We use the one dimensional heat diffusion equation with the appropriate solution in each layer and boundary conditions at the interfaces to calculate the heat transport in this bounded system. We also consider the heat flux at the surface of the samle as boundary condition instead of using a fixed tempertaure. From this, we obtain an expression for the efective thermal diffusivity of the composite sample in terms of the thermal diffusivity of its constituent materials whithout any approximations.Comment: 16 pages, 1 figure, RevTeX v. 3.0 macro packag

Electron and Phonon Temperature Relaxation in Semiconductors Excited by Thermal Pulse

Electron and phonon transient temperatures are analyzed in the case of nondegenerate semiconductors. An analytical solution is obtained for rectangular laser pulse absorption. It is shown that thermal diffusion is the main energy relaxation mechanism in the phonon subsystem. The mechanism depends on the correlation between the sample length and the electron cooling length in an electron subsystem. Energy relaxation occurs by means of the electron thermal diffusion in thin samples (), and by means of the electron-phonon energy interaction in thick samples (). Characteristic relaxation times are obtained for all the cases, and analysis of these times is made. Electron and phonon temperature distributions in short and long samples are qualitatively and quantitatively analyzed for different correlations between the laser pulse duration and characteristic times.Comment: 33 pages, 16 figure