Enhancement of mode stability in vertical cavity surface emitting lasers with diffused quantum wells structure

The use of diffused quantum well structures to enhance single transverse mode operation in vertical cavity surface emitting GaAs-AlGaAs QW semiconductor lasers is proposed and analyzed theoretically.published_or_final_versio

Semiconductor lasers using diffused quantum-well structures

We assess the relative merits and prospects of using diffused quantum-well (QW) structures in semiconductor lasers. First, different techniques to achieve interdiffusion are analyzed and compared. Second, recent development of semiconductor lasers using interdiffusion technique is also discussed. Third, the optical properties of diffused QWs are studied. In addition, novel design of diffused QWs structures to maintain stable single-mode operation in semiconductor lasers is proposed. Finally, brief discussion and conclusion are given.published_or_final_versio

Proposed enhancement of side-mode suppression ratio in λ/4 shifted distributed feedback lasers with nonuniform diffused quantum wells

An enhancement of the side mode suppression ratio, by utilizing interdiffused quantum wells, of a λ/4 shifted distributed feedback laser is demonstrated theoretically. It is found that by introducing a diffusion step along the longitudinal direction of the quantum-well active region, the suppression ratio can be improved significantly for large /spl kappa/L (>2.6) devices. The maximum power for single longitudinal mode operation is increased by more than 50 mW.published_or_final_versio

Influence of lateral field on the relaxation oscillation frequency of semiconductor lasers

We demonstrate theoretically that the lateral field distribution can be utilized to enhance the relaxation oscillation frequency of semiconductor lasers. It is found, for some laser parameters, that gain-guided semiconductor lasers with narrow stripe can exhibit higher relaxation oscillation frequency than index-guided devices.published_or_final_versio

High-power single-mode operation in DFB and FP lasers using diffused quantum-well structure

Distributed feedback (DFB) and Fabry-Perot (FP) semiconductor lasers with step and periodic interdiffusion quantum-well structures are proposed for high-power single-longitudinal-mode operation. It is shown that the phase-adjustment region formed by the diffusion step (i.e., step change in optical gain and refractive index) counteracts the influence of spatial hole burning, especially for DFB lasers with large coupling-length products biased at high injection current. Furthermore, it is found that with careful design of the diffusion grating (i.e., grating period and amount of diffusion extent) of FP lasers, side-mode suppression ratio can be enhanced and threshold current density can be minimized to a satisfied level.published_or_final_versio

Active anti-guide vertical cavity surface emitting lasers with diffused quantam wells structure

The enhancement of single transverse mode operation in vertical cavity surface emitting lasers by using interdiffused quantum wells is proposed and analyzed. It is observed that the influence of self-focusing (arising from carrier spatial hole burning and thermal lensing) on the profile of transverse modes can be minimized by introducing a step diffused quantum wells structure inside the core region of quantum-well active layer. Stable single-mode operation in vertical cavity surface emitting lasers can also be maintained.published_or_final_versio

Vertical-cavity surface-emitting semiconductor lasers with diffusedquantum wells

A self-consistent dynamic model is developed including the current distribution, carrier diffusion rate and spatial hole burning effects to investigate the modulation response of vertical-cavity surface-emitting lasers with diffused quantum wells structure. It is found that the overall performance including relaxation oscillation frequency and modulation bandwidth is improved.published_or_final_versio

Fabry Perot semiconductor lasers with periodic diffused quantum wells structure

Fabry Perot semiconductor laser with periodic change in the extent of interdiffusion along the longitudinal direction of the quantum well active region is proposed to improve the discrimination between cavity modes.published_or_final_versio

Dynamic response of buried heterostructure and stripe geometry λ/4 DFB semiconductor lasers

A comparison between different lateral confinement structures in DFB laser is analyzed with identical material parameters and structure in transverse and longitudinal directions. Results show that stripe geometry DFB lasers offer better dynamic response than buried heterostructure DFB lasers.published_or_final_versio

Theoretical analysis of modulation response and second-order harmonic distortion in vertical-cavity surface-emitting lasers

A rate-equation model is developed, with the consideration of size effects, to analyze the steady state and dynamic behavior of index-guided vertical-cavity surface-emitting lasers. The size dependence of spatial hole burning, cavity loss, as well as thermal resistance of device cavity are taken into account. Using this model, the influence of size effects on the amplitude modulation response and second-order harmonic distortion are studied. It is found that a laser with a small core radius exhibits better modulation response and less harmonic distortion than that of a large waveguide device, however, there is a tradeoff between the output power and modulation efficiency of the lasers.published_or_final_versio