Design of Multimodal Sensor Module for Outdoor Robot Surveillance System

Recent studies on surveillance systems have employed various sensors to recognize and understand outdoor environments. In a complex outdoor environment, useful sensor data obtained under all weather conditions, during the night and day, can be utilized for application to robots in a real environment. Autonomous surveillance systems require a sensor system that can acquire various types of sensor data and can be easily mounted on fixed and mobile agents. In this study, we propose a method for modularizing multiple vision and sound sensors into one system, extracting data synchronized with 3D LiDAR sensors, and matching them to obtain data from various outdoor environments. The proposed multimodal sensor module can acquire six types of images: RGB, thermal, night vision, depth, fast RGB, and IR. Using the proposed module with a 3D LiDAR sensor, multimodal sensor data were obtained from fixed and mobile agents and tested for more than four years. To further prove its usefulness, this module was used as a monitoring system for six months to monitor anomalies occurring at a given site. In the future, we expect that the data obtained from multimodal sensor systems can be used for various applications in outdoor environments

TAPE-seq is a cell-based method for predicting genome-wide off-target effects of prime editor

Methods to predict genome-wide off-target activities of prime editors (PEs) are currently lacking. Here the authors report a cell-based assay, TAgmentation of Prime Editor sequencing (TAPE-seq), that provides genome-wide off-target candidates for PEs

Integration of Workflow Management and Simulation

Addressed in this paper is a method of integrating a worldlow system and simulation technology. It is often conceived that workflow systems are a major tool to support BPR. A key to apply the worldlow systems to BPR is how to analyse and evaluate the performance of newly designed processes in advance. A simulation module, called WFSIM, has been developed and interfaced with a workflow system to better support the BPR capability. We demonstrate the workability of translating from a workflow model to a simulation language

Comparison for 1/ f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

International audienceDC and 1/f noise performances of the AlGaN/GaN fin-shaped field-effect transistor (FinFET) with fin width of 50 nm were analyzed. The FinFET exhibited approximately six times larger normalized drain current and transconductance, compared to those of the AlGaN/GaN planar metal-insulator-semiconductor heterostructure field-effect-transistor (MISHFET) fabricated on the same wafer. It was also observed that the FinFET exhibited improved noise performance with lower noise magnitude of 8.5×10 -15 A 2 /Hz when compared to the value of 8.7×10 -14 A 2 /Hz for the planar MISHFET. An intensive analysis indicated that both devices follow the carrier number fluctuation model, but the FinFET suffers much less charge trapping effect compared to the MISHFET (two orders lower charge trapping was observed). Moreover, the FinFET did not exhibit the Lorentz-like components, which explains that the depleted fin structure effectively prevents the carriers from being trapped into the underlying thick GaN buffer layer. On the other hand, the slope of the noise is 2 irrespective of drain voltage and apparently showed the Lorentz-like components, especially at high drain voltage in MISHFET device. This explains that the carrier trapping/detrapping between the 2-D electron gas channel and the GaN buffer layer is significant in MISHFET

High-bandwidth InGaAs photodetectors heterogeneously integrated on silicon waveguides using optofluidic assembly

Light-induced manipulation techniques have been utilized to transport, trap, or levitate microscopic objects for a wide range of applications in biology, electronics, and photonics. Without making direct physical contact, they can provide simple yet powerful means for high-precision assembly of microscale functional blocks and components within the integrated circuit platforms, thereby offering a viable alternative to the conventional heterogeneous integration techniques, such as wafer/die bonding and transfer printing. Using a microbubble-based optofluidic pick-and-place assembly process, heterogeneous integration of compact III-V semiconductor photodetectors on a silicon-based photonic integrated circuit chip, enabling direct high-speed vertical electrical contacts for significantly improved photogenerated carrier transit distance/time, is experimentally demonstrated. The microdisk-shaped InGaAs p-i-n photodetector integrated on the silicon waveguide has a 3 dB bandwidth exceeding 50 GHz under the applied bias voltage of −1 V for near-infrared wavelengths around 1.55 µm. The light-induced optofluidic assembly will provide a promising route for seamless heterogeneous integration of various optoelectronic components with high-speed and low-noise electrical interconnection on the fully processed silicon photonic/electronic integrated circuit platforms

1/f -noise characteristics of AlGaN/GaN omega shaped nanowire FETs

session 4: Frequency Phenomena and NoiseInternational audienceThe AlGaN/GaN omega-shaped nanowire FETs with different nanowire widths (W) have been fabricated. The effects of varying W on the performance of AlGaN/GaN omega-shaped nanowire FETs were investigated using low frequency noise (LFN) measurement. It was found that the noise characteristics of the device with narrow W show improved noise performances due to the accumulation of electrons in the volume of the nanowire which constricts the electron trapping in GaN layer. This volume accumulation of electrons is responsible for the mobility fluctuations because it decreases the probability of channel electrons at surface being captured into the surface traps, and also high carrier concentration screens the effective trapping of electrons in the volume of the nanowire. Whereas, width increases the LFN characteristics tended to be dominated by the carrier number fluctuation because the fin is too wide for volume accumulation and are subjected to the bulk trapping

Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n(+)-Source/Drain on a Selectively Etched GaN

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Impact of multi-layer carbon-doped/undoped GaN buffer on suppression of current collapse in AlGaN/GaN HFETs

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1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs

International audienceThe low-frequency noise (LFN) characteristics of AlGaN/GaN FinFETs with omega-gate and combined two-dimensional electron gas (2DEG) and MOS conduction are investigated. It is found that LFN is dominated by carrier number fluctuations whatever the width of the fin. Charge trapping in narrow devices is one order of magnitude lower than in wide fin device. In narrow devices, the sidewall conduction prevails and the noise mainly stems from the carrier trapping in the sidewall Al2O3 gate dielectric. Instead, in wide fin devices, the top gate AlGaN/GaN HEMT structure dominates and the LFN is mostly governed by the carrier trapping in the GaN layer close to 2DEG channel