342 research outputs found
Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe and CuGaSe including a detailed analysis of band-resolved transmittances
We study spin-dependent transport properties in magnetic tunneling junctions
(MTJs) with semiconductor barriers, Fe/CuInSe/Fe(001) and
Fe/CuGaSe/Fe(001). By analyzing their transmittances at zero bias voltage
on the basis of the first-principles calculations, we find that spin-dependent
coherent tunneling transport of wave functions yields a relatively
high magnetoresistance (MR) ratio in both the MTJs. We carry out a detailed
analysis of the band-resolved transmittances in both the MTJs and find an
absence of the selective transmission of wave functions in some
energy regions a few eV away from the Fermi level due to small band gaps in
CuInSe and CuGaSe.Comment: 4 pages, 1 figure, 1 tabl
Measurement of High Temperature Thermodynamic Propertiesof Several Binary Alkali Silicate Glasses
The method for continuous measurement of the high temperature heat content, developed by W.Oelsen et al. and applied to the glasses by M.Tashiro, was examined and modified in some points. Relations between the temperature
and heat contents referred to the standard temperature 25℃, were determined for the some glasses of R(2)O-SiO(2) system, and the specific heats as well as the entropies were calculated. Comparing the results, some views have been obtained relating to the effect of the species and content of alkali ions on the thermodynamic quantities of such glasses
A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions
We investigated the spin-dependent transport properties of Fe/MgAl2O4/Fe(001)
magnetic tunneling junctions (MTJs) on the basis of first-principles
calculations of the electronic structures and the ballistic conductance. The
calculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJ
was about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ
(1600%) for the same barrier thickness. However, there was an evanescent state
with delta 1 symmetry in the energy gap around the Fermi level of normal spinel
MgAl2O4, indicating the possibility of a large TMR in Fe/MgAl2O4/Fe(001) MTJs.
The small TMR ratio of the Fe/MgAl2O4/Fe(001) MTJ was due to new conductive
channels in the minority spin states resulting from a band-folding effect in
the two-dimensional (2-D) Brillouin zone of the in-plane wave vector (k//) of
the Fe electrode. Since the in-plane cell size of MgAl2O4 is twice that of the
primitive in-plane cell size of bcc Fe, the bands in the boundary edges are
folded, and minority-spin states coupled with the delta 1 evanescent state in
the MgAl2O4 barrier appear at k//=0, which reduces the TMR ratio of the MTJs
significantly.Comment: 5 pages, 6 figures, 1 tabl
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