Experimental verification of the commutation relation for Pauli spin operators using single-photon quantum interference

We report experimental verification of the commutation relation for Pauli spin operators using quantum interference of the single-photon polarization state. By superposing the quantum operations $\sigma_z \sigma_x$ and $\sigma_x \sigma_z$ on a single-photon polarization state, we have experimentally implemented the commutator, $[\sigma_{z}, \sigma_{x}]$, and the anticommutator, $\{\sigma_{z}, \sigma_{x}\}$, and have demonstrated the relative phase factor of $\pi$ between $\sigma_z \sigma_x$ and $\sigma_x \sigma_z$ operations. The experimental quantum operation corresponding to the commutator, $[\sigma_{z}, \sigma_{x}]=k\sigma_y$, showed process fidelity of 0.94 compared to the ideal $\sigma_y$ operation and $|k|$ is determined to be $2.12\pm0.18$.Comment: 4pages, 3 figure

Realizing Physical Approximation of the Partial Transpose

The partial transpose by which a subsystem's quantum state is solely transposed is of unique importance in quantum information processing from both fundamental and practical point of view. In this work, we present a practical scheme to realize a physical approximation to the partial transpose using local measurements on individual quantum systems and classical communication. We then report its linear optical realization and show that the scheme works with no dependence on local basis of given quantum states. A proof-of-principle demonstration of entanglement detection using the physical approximation of the partial transpose is also reported.Comment: 5 pages with appendix, 3 figure

Experimental Implementation of the Universal Transpose Operation

The universal transpose of quantum states is an anti-unitary transformation that is not allowed in quantum theory. In this work, we investigate approximating the universal transpose of quantum states of two-level systems (qubits) using the method known as the structural physical approximation to positive maps. We also report its experimental implementation in linear optics. The scheme is optimal in that the maximal fidelity is attained and also practical as measurement and preparation of quantum states that are experimentally feasible within current technologies are solely applied.Comment: 4 pages, 4 figure

Temperature dependence of Mott transition in VO_2 and programmable critical temperature sensor

The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing applied voltages, the transition temperature of the MIT current jump decreases. We find a monoclinic and electronically correlated metal (MCM) phase between the abrupt current jump and the structural phase transition (SPT). After the transition from insulator to metal, a linear increase in current (or conductivity) is shown with temperature until the current becomes a constant maximum value above T_{SPT}=68^oC. The SPT is confirmed by micro-Raman spectroscopy measurements. Optical microscopy analysis reveals the absence of the local current path in micro scale in the VO_2 device. The current uniformly flows throughout the surface of the VO_2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor.Comment: 4 pages, 3 figure

A new design of Doherty amplifiers using defected ground structure

In this letter, a new Doherty power amplifier having the ideal harmonic termination condition that has been usually ignored is proposed. A defected ground structure (DGS) is adopted on the ground pattern of the output lambda/4 impedance inverter of the carrier amplifier and output offset transmission line of the peaking amplifier that are essential for proper load modulation operation of a conventional Doherty amplifier. As a result of the second and third harmonic termination, excellent improvement in power added efficiency (PAE), gain, maximum output power as well as linearity is obtained. The acquired improvements in gain, maximum output power (P1 dB), PAE, and adjacent channel leakage ratio to wideband code division multiple access 2FA signal are 0.33 dB, 0.42 dB, 12.7%, and 5.1 dB, respectively. Moreover, physical length of microstrip line is shortened fairly by DGS, therefore the whole amplifier circuit size is considerably reduce

Observation of First-Order Metal-Insulator Transition without Structural Phase Transition in VO_2

An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator VO_2 based two-terminal device. An abrupt current jump is measured at a critical electric field. The Raman-shift frequency and the bandwidth of the most predominant Raman-active A_g mode, excited by the electric field, do not change through the abrupt MIT, while, they, excited by temperature, pronouncedly soften and damp (structural MIT), respectively. This structural MIT is found to occur secondarily.Comment: 4 pages, 4 figure

Monoclinic and Correlated Metal Phase in VO_2 as Evidence of the Mott Transition: Coherent Phonon Analysis

In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 THz and 6.0 THz indicating the rutile metal phase of VO_2 does not occur simultaneously with the first-order metal-insulator transition (MIT) near 68^oC. The monoclinic and correlated metal(MCM) phase between the MIT and the structural phase transition (SPT) is generated by a photo-assisted hole excitation which is evidence of the Mott transition. The SPT between the MCM phase and the rutile metal phase occurs due to subsequent Joule heating. The MCM phase can be regarded as an intermediate non-equilibrium state.Comment: 4 pages, 2 figure