Experimental verification of the commutation relation for Pauli spin operators using single-photon quantum interference

We report experimental verification of the commutation relation for Pauli spin operators using quantum interference of the single-photon polarization state. By superposing the quantum operations $\sigma_z \sigma_x$ and $\sigma_x \sigma_z$ on a single-photon polarization state, we have experimentally implemented the commutator, $[\sigma_{z}, \sigma_{x}]$, and the anticommutator, $\{\sigma_{z}, \sigma_{x}\}$, and have demonstrated the relative phase factor of $\pi$ between $\sigma_z \sigma_x$ and $\sigma_x \sigma_z$ operations. The experimental quantum operation corresponding to the commutator, $[\sigma_{z}, \sigma_{x}]=k\sigma_y$, showed process fidelity of 0.94 compared to the ideal $\sigma_y$ operation and $|k|$ is determined to be $2.12\pm0.18$.Comment: 4pages, 3 figure

Experimental Implementation of the Universal Transpose Operation

The universal transpose of quantum states is an anti-unitary transformation that is not allowed in quantum theory. In this work, we investigate approximating the universal transpose of quantum states of two-level systems (qubits) using the method known as the structural physical approximation to positive maps. We also report its experimental implementation in linear optics. The scheme is optimal in that the maximal fidelity is attained and also practical as measurement and preparation of quantum states that are experimentally feasible within current technologies are solely applied.Comment: 4 pages, 4 figure

Observation of First-Order Metal-Insulator Transition without Structural Phase Transition in VO_2

An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator VO_2 based two-terminal device. An abrupt current jump is measured at a critical electric field. The Raman-shift frequency and the bandwidth of the most predominant Raman-active A_g mode, excited by the electric field, do not change through the abrupt MIT, while, they, excited by temperature, pronouncedly soften and damp (structural MIT), respectively. This structural MIT is found to occur secondarily.Comment: 4 pages, 4 figure

Monoclinic and Correlated Metal Phase in VO_2 as Evidence of the Mott Transition: Coherent Phonon Analysis

In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 THz and 6.0 THz indicating the rutile metal phase of VO_2 does not occur simultaneously with the first-order metal-insulator transition (MIT) near 68^oC. The monoclinic and correlated metal(MCM) phase between the MIT and the structural phase transition (SPT) is generated by a photo-assisted hole excitation which is evidence of the Mott transition. The SPT between the MCM phase and the rutile metal phase occurs due to subsequent Joule heating. The MCM phase can be regarded as an intermediate non-equilibrium state.Comment: 4 pages, 2 figure

The Metal-Insulator Transition in \u3cem\u3eVO\u3csub\u3e2\u3c/sub\u3e\u3c/em\u3e Studied using Terahertz Apertureless Near-Field Microscopy

We have studied the metal-insulator transition in a vanadium dioxide (VO2) thin film using terahertz apertureless near-field optical microscopy. We observe a variation of the terahertz amplitude due to the phase transition induced by an applied voltage across the sample. The change of the terahertz signal is related to the abrupt change of the conductivity of the VO2 film at the metal-insulator transition. The subwavelength spatial resolution of this near-field microscopy makes it possible to detect signatures of micron-scale metallic domains in inhomogeneous VO2 thin films