Second Harmonic Generation in Gapped Graphene

The second-order nonlinear optical susceptibility $\Pi^{(2)}$ for second harmonic generation is calculated for gapped graphene. The linear and second-order nonlinear plasmon excitations are investigated in context of second harmonic generation (SHG). We report a red shift and an order of magnitude enhancement of the SHG resonance with growing gap, or alternatively, reduced electro-chemical potential.Comment: 10 pages,10 figure

Spin-dependent Scattering by a Potential Barrier on a Nanotube

The electron spin effects on the surface of a nanotube have been considered through the spin-orbit interaction (SOI), arising from the electron confinement on the surface of the nanotube. This is of the same nature as the Rashba-Bychkov SOI at a semiconductor heterojunction. We estimate the effect of disorder within a potential barrier on the transmission probability. Using a continuum model, we obtained analytic expressions for the spin-split energy bands for electrons on the surface of nanotubes in the presence of SOI. First we calculate analytically the scattering amplitudes from a potential barrier located around the axis of the nanotube into spin-dependent states. The effect of disorder on the scattering process is included phenomenologically and induces a reduction in the transition probability. We analyzed the relative role of SOI and disorder on the transmission probability which depends on the angular and linear momentum of the incoming particle, and its spin orientation. We demonstrated that in the presence of disorder perfect transmission may not be achieved for finite barrier heights.Comment: 16 pages, 15 figure

Quantum ballistic transport by interacting two-electron states in quasi-one-dimensional channels

For quantum ballistic transport of electrons through a short conduction channel, the role of Coulomb interaction may significantly modify the energy levels of two-electron states at low temperatures as the channel becomes wide. In this regime, the Coulomb effect on the two-electron states is calculated and found to lead to four split energy levels, including two anticrossing-level and two crossing-level states. Moreover, due to the interplay of anticrossing and crossing effects, our calculations reveal that the ground two-electron state will switch from one anticrossing state (strong confinement) to a crossing state (intermediate confinement) as the channel width gradually increases and then back to the original anticrossing state (weak confinement) as the channel width becomes larger than a threshold value. This switching behavior leaves a footprint in the ballistic conductance as well as in the diffusion thermoelectric power of electrons. Such a switching is related to the triple spin degeneracy as well as to the Coulomb repulsion in the central region of the channel, which separates two electrons away and pushes them to different channel edges. The conductance reoccurrence region expands from the weak to the intermediate confinement regime with increasing electron density

Finite-temperature plasmons, damping and collective behavior for α−T3\alpha-\mathcal{T}_3 model

We have conducted a thorough theoretical and numerical investigation of the electronic susceptibility, polarizability, plasmons, their damping rates, as well as the static screening in pseudospin-1 Dirac cone materials with a flat band, or for a general $\alpha - \mathcal{T}_3$ model, at finite temperatures. This includes calculating the polarization function, plasmon dispersions and their damping rates at arbitrary temperatures and obtaining analytical approximations the long wavelength limit, low and high temperatures. We demonstrate that the integral transformation of the polarization function cannot be used directly for a dice lattice revealing some fundamental properties and important applicability limits of the flat band dispersions model. At $k_B T \ll E_F$, the largest temperature-induced change of the polarization function and plasmons comes from the mismatch between the chemical potential and the Fermi energy. We have also obtained a series of closed-form semi-analytical expressions for the static limit of the polarization function of an arbitrary $\alpha - \mathcal{T}_3$ material at any temperature with exact analytical formulas for the high, low and zero temperature limits which is of tremendous importance for all types of transport and screening calculations for the flat band Dirac materials.Comment: 19 pages, 8 figure