Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN/GaN

Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in InGaN/GaN quantum wells. The carrier and thermal dynamics were observed through the time profile of the TR-M-TL signal. Also, NSOM-photoluminescence and NSOM-TL images were observed at the same time. By comparing these two images, both radiative and nonradiative recombination centers in InGaN active layer were unambiguously discriminated with submicrometer scale. Such nonradiative carrier dynamics has been difficult to observe by conventional techniques in spite of its importance

Correlated electron transport through double quantum dots coupled to normal and superconducting leads

We study Andreev transport through double quantum dots connected in series normal and superconducting (SC) leads, using the numerical renormalization group. The ground state of this system shows a crossover between a local Cooper-pairing singlet state and a Kondo singlet state, which is caused by the competition between the Coulomb interaction and the SC proximity. We show that the ground-state properties reflect this crossover especially for small values of the inter-dot coupling $t$, while in the opposite case, for large $t$, another singlet with an inter-dot character becomes dominant. We find that the conductance for the local SC singlet state has a peak with the unitary-limit value $4e^2/h$. In contrast, the Andreev reflection is suppressed in the Kondo regime by the Coulomb interaction. Furthermore, the conductance has two successive peaks in the transient region of the crossover. It is further elucidated that the gate voltage gives a different variation into the crossover. Specifically, as the energy level of the dot that is coupled to the normal lead varies, the Kondo screening cloud is deformed to a long-range singlet bond.Comment: 11 pages, 10 figure

EFFECTS OF JOINT MOVEMENT ON THE ACCURACY OF 3-POINT SHOOTING IN BASKETBALL

INTRODUCTION: The 3-point shot is particularly important, since a player is required to shoot from a distance that requires both momentum of a ball and movement accuracy. However, there have been only few studies on a 3-point shot. The purpose of this study is to clarify characteristics of players who possess high accuracy of a 3-point shot with respect to joint movements and the ball trajectory

Interplay of Kondo and superconducting correlations in the nonequilibrium Andreev transport through a quantum dot

Using the modified perturbation theory, we theoretically study the nonequilibrium Andreev transport through a quantum dot coupled to normal and superconducting leads (N-QD-S), which is strongly influenced by the Kondo and superconducting correlations. From the numerical calculation, we find that the renormalized couplings between the leads and the dot in the equilibrium states characterize the peak formation in the nonequilibrium differential conductance. In particular, in the Kondo regime, the enhancement of the Andreev transport via a Kondo resonance occurs in the differential conductance at a finite bias voltage, leading to an anomalous peak whose position is given by the renormalized parameters. In addition to the peak, we show that the energy levels of the Andreev bound states give rise to other peaks in the differential conductance in the strongly correlated N-QD-S system. All these features of the nonequilibrium transport are consistent with those in the recent experimental results [R. S. Deacon {\it et al.}, Phys. Rev. Lett. {\bf 104}, 076805 (2010); Phys. Rev. B {\bf 81}, 12308 (2010)]. We also find that the interplay of the Kondo and superconducting correlations induces an intriguing pinning effect of the Andreev resonances to the Fermi level and its counter position.Comment: 22 pages, 23 figure

Huge electron-hole exchange interaction in aluminum nitride

Optical spectroscopy is performed for c-plane homoepitaxial aluminum nitride (AlN) films. The temperature dependence of the polarization-resolved photoluminescence spectra reveals the exciton fine structure. The experimental results demonstrate that the electron-hole exchange interaction energy (j) in AlN is j=6.8 meV, which is the largest value for typical III-V and II-VI compound semiconductors. We propose the effective interatomic distance as the criterion of the electron-hole exchange interaction energy, revealing a universal rule. This study should encourage potential applications of excitonic optoelectronic devices in nitride semiconductors similar to those using II-VI compound semiconductors

Partially-disordered photonic-crystal thin films for enhanced and robust photovoltaics

We present a general framework for the design of thin-film photovoltaics based on a partially-disordered photonic crystal that has both enhanced absorption for light trapping and reduced sensitivity to the angle and polarization of incident radiation. The absorption characteristics of different lattice structures are investigated as an initial periodic structure is gradually perturbed. We find that an optimal amount of disorder controllably introduced into a multi-lattice photonic crystal causes the characteristic narrow-band, resonant peaks to be broadened resulting in a device with enhanced and robust performance ideal for typical operating conditions of photovoltaic applications.Comment: 5 pages, 4 figure

Semipolar {n[n¯]01} InGaN/GaN ridge quantum wells (n = 1−3) fabricated by a regrowth technique

Semipolar {n[n¯]01} InGaN/GaN quantum wells (QWs) (n = 1−3) are fabricated on top of GaN microstructures, which consist of semipolar {1Ī01} facets. Semipolar planes are obtained via regrowth of three-dimensional structures on (0001) GaN templates under controlled growth conditions. Compared to QWs on {1Ī01} facets, {n[n¯]01} ridge QWs show an intense emission at ∼ 440 nm. Time resolved photoluminescence reveals that the radiative lifetime of excitons in {n[n¯]01} InGaN ridge QWs at 13 K is 310 ps, which is comparable to that in {1Ī01} QWs. The estimated internal quantum efficiency at room temperature is as high as 57%