Electric field-enhanced degradation of porous methylsilsesquioxane polymer as observed by in situ FTIRS

10.1149/1.1819891Electrochemical and Solid-State Letters712F99-F102ESLE

Reliability improvement to copper damascene structures using buried capping layer

Advanced Metallization Conference (AMC)271-275MRSP

Effect of porosity on electrical stability of hydrocarbon polymeric low-k dielectric

10.1109/TED.2005.856189IEEE Transactions on Electron Devices52102333-2339IETD

Impact of buried capping layer on electrical stablity of advanced interconnects

10.1116/1.1978895Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures2341499-1503JVTB

Impact of buried capping layer on TDDB physics of advanced interconnects

IEEE International Reliability Physics Symposium Proceedings490-49

Study of leakage mechanisms of the copper/Black Diamond™ damascene process

10.1016/j.tsf.2004.05.051Thin Solid Films462-463SPEC. ISS.330-333THSF

Reliability improvement using buried capping layer in advanced interconnects

Annual Proceedings - Reliability Physics (Symposium)333-337ARLP

Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method

10.1063/1.1592618Applied Physics Letters833524-526APPL

Reliability characterization of organic ultra low k film using ramp voltage breakdown

Proceedings - Electrochemical Society10232-23

Metallization and dielectric reliability in Cu interconnects: Effect of cap layers and surface treatments

Advanced Metallization Conference (AMC)179-188MRSP