A tunable plasmonic refractive index sensor with nanoring-strip graphene arrays

In this paper, a tunable plasmonic refractive index sensor with nanoring-strip graphene arrays is numerically investigated by the finite difference time domain (FDTD) method. The simulation results exhibit that by changing the sensing medium refractive index nmed of the structure, the sensing range of the system is large. By changing the doping level ng, we noticed that the transmission characteristics can be adjusted flexibly. The resonance wavelength remains entirely the same and the transmission dip enhancement over a big range of incidence angles [0,45] for both TM and TE polarizations, which indicates that the resonance of the graphene nanoring-strip arrays is insensitive to angle polarization. The above results are undoubtedly a new way to realize various tunable plasmon devices, and may have a great application prospect in biosensing, detection and imaging

Techniques application on cultural and artistic documentary production: a study of Simon Schama’s Power of the Art

The study objects of this research is Simon Schama’s Power of the Art, a documentary with 8 sets and of length 430 minutes. This research explores the documentary through content analysis. The study analyzes artistic expressions like theme, audio-visual language, montage technique, space-time structure, and so on. The purpose is to study how BBC creators reappear and restore history and explain artistic work through video language. How they use artistic and aesthetic expressions with ideological implications in showing and leading the viewers to think. This excellent documentary owns great reference which is significant for future creation of documentaries of similar state

Beyond Gisin's Theorem and its Applications: Violation of Local Realism by Two-Party Einstein-Podolsky-Rosen Steering

We demonstrate here that for a given mixed multi-qubit state if there are at least two observers for whom mutual Einstein-Podolsky-Rosen steering is possible, i.e. each observer is able to steer the other qubits into two different pure states by spontaneous collapses due to von Neumann type measurements on his/her qubit, then nonexistence of local realistic models is fully equivalent to quantum entanglement (this is not so without this condition). This result leads to an enhanced version of Gisin's theorem (originally: all pure entangled states violate local realism). Local realism is violated by all mixed states with the above steering property. The new class of states allows one e.g. to perform three party secret sharing with just pairs of entangled qubits, instead of three qubit entanglements (which are currently available with low fidelity). This significantly increases the feasibility of having high performance versions of such protocols. Finally, we discuss some possible applications.Comment: 9 pages, 1 figur

catena-Poly[[[aqua­[3-(3-hy­droxy­phen­yl)prop-2-enoato]samarium(III)]-bis­[μ2-3-(3-hy­droxy­phen­yl)prop-2-enoato]] monohydrate]

The title SmIII compound, {[Sm(C9H7O3)3(H2O)]·H2O}n, was obtained under hydrothermal conditions. Its structure is isotypic with the analogous Eu complex. The latter was reported incorrectly in space group P1 by Yan et al. [J. Mol. Struct. (2008), 891, 298–304]. This was corrected by Marsh [Acta Cryst. B65, 782–783] to P-1. The SmIII ion is nine-coordinated by O atoms from one coordinating water molecule and the remaining ones from the 3-(3-hy­droxy­phen­yl)prop-2-enoatate anions (one bidentate, two bidentate and bridging, two monodentate bridging), leading to a distorted tricapped trigonal–prismatic coordination polyhedron surrounded by solvent water mol­ecules. In the crystal, extensive intermolecular O—H⋯O hydrogen-bonding inter­actions and π–π inter­actions [centroid–centroid separation = 3.9393 (1) Å] lead to the formation of a three-dimensional supra­molecular network

Recent Advances in Ambipolar Transistors for Functional Applications

Ambipolar transistors represent a class of transistors where positive (holes) and negative (electrons) charge carriers both can transport concurrently within the semiconducting channel. The basic switching states of ambipolar transistors are comprised of common offâ state and separated onâ state mainly impelled by holes or electrons. During the past years, diverse materials are synthesized and utilized for implementing ambipolar charge transport and their further emerging applications comprising ambipolar memory, synaptic, logic, and lightâ emitting transistors on account of their special bidirectional carrierâ transporting characteristic. Within this review, recent developments of ambipolar transistor field involving fundamental principles, interface modifications, selected semiconducting material systems, device structures, ambipolar characteristics, and promising applications are highlighted. The existed challenges and prospective for researching ambipolar transistors in electronics and optoelectronics are also discussed. It is expected that the review and outlook are well timed and instrumental for the rapid progress of academic sector of ambipolar transistors in lighting, display, memory, as well as neuromorphic computing for artificial intelligence.Ambipolar transistors represent transistors that allow synchronous transport of electrons and holes and their accumulation within semiconductors. This review provides a comprehensive summary of recent advances in various semiconducting materials realized in ambipolar transistors and their functional memory, synapse, logic, as well as lightâ emitting applications.Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/151885/1/adfm201902105_am.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/151885/2/adfm201902105.pd