Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.Comment: Nano Letters, in pres

Metal-coated carbon nanotube tips for Magnetic Force Microscopy

We fabricated cantilevers for magnetic force microscopy with carbon nanotube tips coated with magnetic material. Images of a custom hard drive demonstrated 20 nm lateral resolution, with prospects for further improvements.Comment: Accepted to be published in Applied Physics Letter