Determining the interfacial toughness of low-k films on Si substrate by wedge indentation: Further studies

10.1016/j.actamat.2007.10.051Acta Materialia565977-98

Wedge indentation studies of low-k films at inert, water and ambient environments

10.1016/j.msea.2009.04.030Materials Science and Engineering A5181-2132-13

Nanoindentation for quality control of ULK films

10.1109/IITC.2011.59402902011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Nanomechanical characterization of sputtered RuO2 thin film on silicon substrate for solid state electronic devices

10.1016/j.tsf.2010.10.014Thin Solid Films51961914-1922THSF

Finite element simulation and experimental determination of interfacial adhesion properties by wedge indentation

10.1080/14786430902973858Philosophical Magazine89171395-141

Nanoindentation study of elastic anisotropy of Cu single crystals and grains in TSVs

This paper presents the results of nanoindentation experiments on Cu single crystals and Cu grains in through silicon via (TSV) structures used for 3D integrated circuit (IC) stacking, at sub-10nm and several-10nm penetration depths. The reduced moduli for Cu single crystals change from an average value to the uni-directional values, as the penetration depths decrease from several-10nm to sub-10nm. At sub-10nm deformation, about one third of the indentations on Cu(111) and Cu(110) show fully elastic behavior, while all indentations on Cu(100) shows elastic-plastic behavior. The reduced modulus values extracted from indents on Cu(111) and Cu(110) with fully elastic behavior are about 195GPa and 145GPa, respectively. For penetration depths of several-10nm up to 50nm, the reduced modulus for Cu(100) varies between 50GPa to 100GPa. The averaged reduced moduli determined at relatively large penetration depths are explained with lattice rotation beneath the indentations. Sinc e the activation of multiple slip systems is required for lattice rotation, the transition of the unidirectional reduced modulus to the averaged value with increasing penetration depths occurs differently for Cu(111) and Cu(100). Similar to the results from Cu single crystals, unidirectional reduced moduli are obtained for the Cu grains in TSV structures at sub-10nm penetration depths

Interfacial delamination cracking shapes and stress states during wedge indentation in a soft-film-on-hard-substrate system - Computational simulation and experimental studies

10.1557/jmr.2011.175Journal of Materials Research26192511-2523JMRE

Determining interfacial properties of submicron low- k films on Si substrate by using wedge indentation technique

10.1063/1.2749473Journal of Applied Physics10112-JAPI

Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging

10.1016/j.tsf.2011.10.211Thin Solid Films52062073-2076THSF