Growth of children with cancer

The results of the present study indicate that it could be worthwhile for future researchers to study growth changes during very short periods of time using knemometry. This would enable them to differentiate more accurately the potentially adverse effect on growth of the separate components of the treatment given. In order to reveal the pathogenesis of the growth retardation, hormone levels will have to be studied. The possibility of measuring growth hormone in urine samples gives the opportunity to investigate growth hormone release at various times during the treatment of an individual patient.

Radiofrequency ablation in the treatment of liver tumors in children

Hepatoblastoma and liver metastasis of Wilms' tumors are rare hepatic tumors in children. Treatment of both tumors consists of a combination of chemotherapy and liver surgery. Radiofrequency ablation (RFA) is frequently used for the treatment of adult liver tumors but is rarely mentioned as a treatment option in pediatric liver tumors. We present a patient with hepatoblastoma and 1 with liver metastasis from a Wilms' tumor. Both patients were treated according to the latest protocols except that surgery included use of RFA. Both are well and recurrence free 8 and 3 years after surgery. Radiofrequency ablation may be a good addition to the existing arsenal of treatment modalities for pediatric liver tumors. (C) 2012 Elsevier Inc. All rights reserved

Effects of crystalline regrowth on dopant profiles in preamorphized silicon

\u3cp\u3eThe phenomenon of dopants migrating towards the surface against the concentration gradient may be useful to control junction depth for ultra-shallow profiles. We apply high-resolution SIMS - in combination with channelling Rutherford backscattering spectroscopy (RBS) - to reveal these subtle, yet highly significant changes in dopant profiles during or after solid phase epitaxial regrowth (SPER) in germanium-preamorphized silicon. We observe redistribution for shallow implantations of arsenic in preamorphized Si towards the surface during SPER. This is caused by segregation of As in front of the amorphous/crystalline (a/c) Si interface. Also for boron anomalous behavior has recently been reported, showing preferential migration towards the surface after crystalline regrowth at high concentrations for shallow implantation of BF \u3csub\u3e2\u3c/sub\u3e\u3csup\u3e+\u3c/sup\u3e in crystalline Si or B\u3csup\u3e+\u3c/sup\u3e in Ge-preamorphized Si. Here, we investigate the time- and temperature-dependence of this phenomenon to clear up the mechanism for redistribution during crystalline regrowth. Redistribution of B is shown to occur only partly during SPER, most likely caused by segregation. Still, significant changes take place after completion of SPER during prolonged annealing. We propose that this is provoked by the locally steep concentration gradient of interstitials close to the surface after restoration of the crystalline structure.\u3c/p\u3

Control of a metal-electrode work function by solid-state diffusion of nitrogen

\u3cp\u3eThe work function of a metal gate electrode has been adjusted with the introduction of nitrogen by solid-source diffusion from an over-stoichiometric TiN\u3csub\u3e1+x\u3c/sub\u3e layer. RBS measurements have shown that measurable concentrations of nitrogen can be diffused into a 10nm Ta layer at moderate anneal temperatures (>500°C), and that this concentration increases with temperature in the range 500-1000°C. Capacitance-voltage measurements have been carried out on 1Onm tantalum layers on Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e. These measurements have indicated that the work function of tantalum changes by -0.08eV due to the presence of the over-stoichiometric TiN\u3csub\u3e1+x\u3c/sub\u3e covering layer during anneal (800°C/30 inch). Similar C-V measurements have been carried out on 10nm molybdenum layers on SiO\u3csub\u3e2\u3c/sub\u3e and on Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e dielectrics. These have shown that the work function of molybdenum is substantially different for metal stacks with the TiN\u3csub\u3e1+x\u3c/sub\u3e covering layer after a similar anneal. The work function changes by -0.52eV for molybdenum on SiO\u3csub\u3e2\u3c/sub\u3e and by 1.1eV for molybdenum on Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e. The results suggest great potential for molybdenum as a candidate for a single-metal dual-work function approach to integrating metal gates into future CMOS technologies.\u3c/p\u3

Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface

\u3cp\u3eWe demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at 700 °C after recrystallization of an amorphous layer. In this work, we observe the preferential diffusion following a preamorphizing germanium implant, and also after a self-amorphizing phosphorus implant. This phenomenon is driven by the presence and dissolution of silicon interstitial defects. The greater the distance between the defect band and the high-concentration phosphorus profile, the less the preferential diffusion for a fixed anneal time. The overall result of this effect is a phosphorus profile that is significantly shallower and steeper than after implant.\u3c/p\u3

Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

\u3cp\u3eThe influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.\u3c/p\u3