Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride

We propose monolayer epitaxial graphene and hexagonal boron nitride (h-BN) as ultimate thickness covalent spacers for magnetoresistive junctions. Using a first-principles approach, we investigate the structural, magnetic and spin transport properties of such junctions based on structurally well defined interfaces with (111) fcc or (0001) hcp ferromagnetic transition metals. We find low resistance area products, strong exchange couplings across the interface, and magnetoresistance ratios exceeding 100% for certain chemical compositions. These properties can be fine tuned, making the proposed junctions attractive for nanoscale spintronics applications.Comment: 5 page

Excitonic effects in two-dimensional TiSe2_2 from hybrid density functional theory

Transition metal dichalcogenides (TMDs), whether in bulk or in monolayer form, exhibit a rich variety of charge-density-wave (CDW) phases and stronger periodic lattice distortions. While the actual role of nesting has been under debate, it is well understood that the microscopic interaction responsible for the CDWs is the electron-phonon coupling. The case of TiSe$_2$ is however unique in this family in that the normal state above the critical temperature $T_\mathrm{CDW}$ is characterized by a small quasiparticle bandgap as measured by ARPES, so that no nesting-derived enhancement of the susceptibility is present. It has therefore been argued that the mechanism responsible for this CDW should be different and that this material realizes the excitonic insulator phase proposed by Walter Kohn. On the other hand, it has also been suggested that the whole phase diagram can be explained by a sufficiently strong electron-phonon coupling. In this work, in order to estimate how close this material is to the pure excitonic insulator instability, we quantify the strength of electron-hole interactions by computing the exciton band structure at the level of hybrid density functional theory, focusing on the monolayer. We find that in a certain range of parameters the indirect gap at $q_{\mathrm{CDW}}$ is significantly reduced by excitonic effects. We discuss the consequences of those results regarding the debate on the physical mechanism responsible for this CDW. Based on the dependence of the calculated exciton binding energies as a function of the mixing parameter of hybrid DFT, we conjecture that a necessary condition for a pure excitonic insulator is that its noninteracting electronic structure is metallic.Comment: 6 pages, 3 figure

Crystal field, ligand field, and interorbital effects in two-dimensional transition metal dichalcogenides across the periodic table

Two-dimensional transition metal dichalcogenides (TMDs) exist in two polymorphs, referred to as $1T$ and $1H$, depending on the coordination sphere of the transition metal atom. The broken octahedral and trigonal prismatic symmetries lead to different crystal and ligand field splittings of the $d$ electron states, resulting in distinct electronic properties. In this work, we quantify the crystal and ligand field parameters of two-dimensional TMDs using a Wannier-function approach. We adopt the methodology proposed by Scaramucci et al. [A. Scaramucci et al., J. Phys.: Condens. Matter 27, 175503 (2015)]. that allows to separate various contributions to the ligand field by choosing different manifolds in the construction of the Wannier functions. We discuss the relevance of the crystal and ligand fields in determining the relative stability of the two polymorphs as a function of the filling of the $d$-shell. Based on the calculated parameters, we conclude that the ligand field, while leading to a small stabilizing factor for the $1H$ polymorph in the $d^1$ and $d^2$ TMDs, plays mostly an indirect role and that hybridization between different $d$ orbitals is the dominant feature. We investigate trends across the periodic table and interpret the variations of the calculated crystal and ligand fields in terms of the change of charge-transfer energy, which allows developing simple chemical intuition.Comment: 16 pages, 14 figure

Engineering Quantum Spin Hall Effect in Graphene Nanoribbons via Edge Functionalization

Kane and Mele predicted that in presence of spin-orbit interaction graphene realizes the quantum spin Hall state. However, exceptionally weak intrinsic spin-orbit splitting in graphene ($\approx 10^{-5}$ eV) inhibits experimental observation of this topological insulating phase. To circumvent this problem, we propose a novel approach towards controlling spin-orbit interactions in graphene by means of covalent functionalization of graphene edges with functional groups containing heavy elements. Proof-of-concept first-principles calculations show that very strong spin-orbit coupling can be induced in realistic models of narrow graphene nanoribbons with tellurium-terminated edges. We demonstrate that electronic bands with strong Rashba splitting as well as the quantum spin Hall state spanning broad energy ranges can be realized in such systems. Our work thus opens up new horizons towards engineering topological electronic phases in nanostructures based on graphene and other materials by means of locally introduced spin-orbit interactions.Comment: 5 pages, 3 figure

Topological Aspects of Charge-Carrier Transmission across Grain Boundaries in Graphene

We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-B\"uttiker formalism within the tight-binding approximation. Calculations reveal a strong suppression of transmission at low energies upon decreasing the density of dislocations with the smallest Burger's vector ${\mathbf b}=(1,0)$. The observed transport anomaly is explained from the point of view of back-scattering due to localized states of topological origin. These states are related to the gauge field associated with all dislocations characterized by ${\mathbf b}=(n,m)$ with $n-m \neq 3q$ ($q \in \mathbb{Z}$). Our work identifies an important source of charge-carrier scattering caused by topological defects present in large-area graphene samples produced by chemical vapor deposition.Comment: 5 pages, 4 figure

Charge-density-wave phase, mottness and ferromagnetism in monolayer 1T1T-NbSe2_2

The recently investigated $1T$-polymorph of monolayer NbSe$_2$ revealed an insulating behaviour suggesting a star-of-David phase with $\sqrt{13}\,\times\sqrt{13}$ periodicity associated with a Mott insulator, reminiscent of $1T$-TaS$_2$. In this work, we examine this novel two-dimensional material from first principles. We find an instability towards the formation of an incommensurate charge-density-wave (CDW) and establish the star-of-David phase as the most stable commensurate CDW. The mottness in the star-of-David phase is confirmed and studied at various levels of theory: the spin-polarized generalized gradient approximation (GGA) and its extension involving the on-site Coulomb repulsion (GGA+$U$), as well as the dynamical mean-field theory (DMFT). Finally, we estimate Heisenberg exchange couplings in this material and find a weak nearest-neighbour ferromagnetic coupling, at odds with most Mott insulators. We point out the close resemblance between this star-of-David phase and flat-band ferromagnetism models

Polycrystalline graphene and other two-dimensional materials

Graphene, a single atomic layer of graphitic carbon, has attracted intense attention due to its extraordinary properties that make it a suitable material for a wide range of technological applications. Large-area graphene films, which are necessary for industrial applications, are typically polycrystalline, that is, composed of single-crystalline grains of varying orientation joined by grain boundaries. Here, we present a review of the large body of research reported in the past few years on polycrystalline graphene. We discuss its growth and formation, the microscopic structure of grain boundaries and their relations to other types of topological defects such as dislocations. The review further covers electronic transport, optical and mechanical properties pertaining to the characterizations of grain boundaries, and applications of polycrystalline graphene. We also discuss research, still in its infancy, performed on other 2D materials such as transition metal dichalcogenides, and offer perspectives for future directions of research.Comment: review article; part of focus issue "Graphene applications