Termination dependence of surface stacking at 4H-SiC (0001) -1×1: Density functional theory calculations

We study the effect of adsorbates on the relative stability of hexagonal and cubic stacking sequences at the topmost SiC bilayers of 4H-SiC (0001) -1×1 surfaces using first-principles calculations. We investigate F-terminated, OH-terminated, H-terminated, and clean surfaces, and in all cases, the cubic structure is more stable than the hexagonal structure. The energy difference between the two structures, however, significantly depends on adsorbates and is largest on the clean surface while it is smallest on the H-terminated surface. Stabilization of the cubic structure at F-terminated and OH-terminated surfaces is in contradiction to a simple argument based on the electrostatic interaction and we attribute it to orbital hybridization between occupied states of adsorbates and unoccupied states of the substrate surface. The present results suggest a possible means of controlling step bunching and the SiC stacking sequence by surface adsorbates. © 2009 The American Physical Society.Hideyuki Hara, Yoshitada Morikawa, Yasuhisa Sano, and Kazuto Yamauchi Phys. Rev. B 79, 153306 (2009)

Development of ion beam figuring system with electrostatic deflection for ultraprecise X-ray reflective optics

We developed an ion beam figuring system that utilizes electrostatic deflection. The system can produce an arbitrary shape by deterministically scanning the ion beam. The scan of the ion beam, which can be precisely controlled using only an electrical signal, enables us to avoid degradation of the mirror shape caused by imperfect acceleration or deceleration of a mechanically scanning stage. Additionally, this surface figuring method can easily be combined with X-ray metrology because the workpiece remains fixed during the figuring. We evaluated the figuring accuracy of the system by fabricating a plano-elliptical mirror for X-ray focusing. A mirror with a shape error of 1.4 nm root mean square (RMS) with a maximum removal depth of 992 nm, which corresponds to figuring accuracy of 0.14% RMS, was achieved. After the second shape corrections, an elliptical shape with a shape error of approximately 1 nm peak-to-valley, 0.48 nm RMS could be fabricated. Then, the mirror surface was smoothed by a low-energy ion beam. Consequently, a micro-roughness of 0.117 nm RMS, measured by atomic force microscopy, was achieved over an area of 1 × 1 μm2.Jumpei Yamada, Satoshi Matsuyama, Yasuhisa Sano, and Kazuto Yamauchi, "Development of ion beam figuring system with electrostatic deflection for ultraprecise X-ray reflective optics", Review of Scientific Instruments 86, 093103 (2015) https://doi.org/10.1063/1.4929323

Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining

Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5±4.7 nm was successfully thinned and made uniform at 7.5±1.5 nm. © 2007 American Institute of Physics.Yasuhisa Sano, Kazuya Yamamura, Hidekazu Mimura, Kazuto Yamauchi, and Yuzo Mori, "Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining", Review of Scientific Instruments 78(8), 086102 (2007) https://doi.org/10.1063/1.2766836

An abrasive-free chemical polishing method assisted by nickel catalyst generated by in situ electrochemical plating

An abrasive-free polishing method using water and a Pt catalyst, called catalyst-referred etching (CARE), has been developed for the finishing of optical and semiconductor surfaces. This method realizes well-ordered surfaces with a smoothness of several tens of picometers without crystallographic disturbance. In this study, we propose a new CARE method using a Ni catalyst with in situ electrochemical plating and dissolution, which enable enhancing the catalytic capability of Ni. This method has advantages to realize more than ten times higher removal rate and better stability compared with the conventional CARE method.Daisetsu Toh, Pho Van Bui, Ai Isohashi, Satoshi Matsuyama, Kazuto Yamauchi, and Yasuhisa Sano, "An abrasive-free chemical polishing method assisted by nickel catalyst generated by in situ electrochemical plating", Review of Scientific Instruments 91, 045108 (2020), https://doi.org/10.1063/1.5141381

High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond. We proposed a novel planarization method that combines chemical mechanical polishing (CMP) and atmospheric-pressure plasma etching (plasma chemical vaporization machining [P-CVM]) and developed a prototype of the basic type CMP/P-CVM combined processing system. This prototype has a mechanical polishing part for introducing a damaged layer on the convex part of the sample surface and a P-CVM part for efficient etching of the damaged layer. Process conditions for plasma generation were determined in order to minimize the optical emission intensity ratio of nitrogen to helium because nitrogen comes from circumstance air and should not exist in the plasma region. Process conditions for mechanical polishing were determined in order to efficiently generate a damaged layer only on the convex part of the sample surface. The combined process was performed using a SiC substrate on which the mesa structure was fabricated as a sample. As a result, we found that the convex parts of the mesa structure were preferentially removed and the surface of the sample was planarized. We also found that the decreasing rate of the peak-to-valley value of the mesa structure obtained by CMP/P-CVM combined processing was approximately seven times greater than that during mechanical polishing.Yasuhisa SANO, Kousuke SHIOZAWA, Toshiro DOI, Syuhei KUROKAWA, Hideo AIDA, Tadakazu MIYASHITA, Kazuto YAMAUCHI, High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates, Mechanical Engineering Journal, 2016, 3(1), 15-00527, https://doi.org/10.1299/mej.15-00527

Development of concave-convex imaging mirror system for a compact and achromatic full-field x-ray microscope

Jumpei Yamada, Satoshi Matsuyama, Shuhei Yasuda, Yasuhisa Sano, Yoshiki Kohmura, Makina Yabashi, Tetsuya Ishikawa, and Kazuto Yamauchi "Development of concave-convex imaging mirror system for a compact and achromatic full-field x-ray microscope", Proc. SPIE 10386, Advances in X-Ray/EUV Optics and Components XII, 103860C (6 September 2017); https://doi.org/10.1117/12.2272904

Catalyzed chemical polishing of SiO2 glasses in pure water

A catalytically assisted etching system was developed for the ultra-precision fabrication of optical components, such as X-ray mirrors and extreme-ultraviolet mask blanks. This study demonstrates that an atomically smooth surface with a sub-Angstrom root-mean-square roughness could be achieved on a SiO2 glass substrate using pure water and Pt as the etching solution and catalyst, respectively. Density functional theory calculations confirmed that the mechanistic pathway was involved in catalyzed hydrolysis. The significant roles of the catalyst were clarified to be the dissociation of water molecules and the stabilization of a meta-stable state, in which a hypervalent silicate state is induced, and the Si-O backbond is elongated and loosened. To confirm the role of the catalyst, the Pt metal was replaced by Au, and the observed drastic difference in the removal rate was attributed to the degree of stabilization of the metastable state.Daisetsu Toh, Pho Van Bui, Ai Isohashi, Naotaka Kidani, Satoshi Matsuyama, Yasuhisa Sano, Yoshitada Morikawa, and Kazuto Yamauchi, "Catalyzed chemical polishing of SiO2 glasses in pure water", Review of Scientific Instruments 90, 045115 (2019), https://doi.org/10.1063/1.5090320

Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst

The authors present a method for flattening SiC surfaces with Pt as a catalyst in HF solution. The mechanism for flattening SiC surfaces is discussed. The flattened 4H-SiC (0001) surface is composed of alternating wide and narrow terraces with single-bilayer-height steps, which are induced by the rate difference of the catalytic reactions between adjacent terraces. Scanning tunneling microscopy images reveal a 1×1 phase on the terraces. The 1×1 phase is composed of coexisting of F- and OH-terminated Si atoms, which originate from the polarization of the underlying Si-C bonds. © 2007 American Institute of Physics.Kenta Arima, Hideyuki Hara, et al. "Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst", Appl. Phys. Lett. 90(20), 202106 (2007) https://doi.org/10.1063/1.2739084