Optical transitions and energy relaxation of hot carriers in Si nanocrystals

Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and holes is found to be the fastest process in the system. However the energy relaxation of hot electron-hole pair is governed by the single optical phonon emission. For a considerable number of states in small nanocrystals single-phonon processes are ruled out by energy conservation law.Comment: 3 pages, 4 figure

Energy transfer processes in Er-doped SiO2 sensitized with Si nanocrystals

We present a high-resolution photoluminescence study of Er-doped SiO2 sensitized with Si nanocrystals (Si NCs). Emission bands originating from recombination of excitons confined in Si NCs and of internal transitions within the 4f-electron core of Er3+ ions, and a band centered at lambda = 1200nm have been identified. Their kinetics have been investigated in detail. Based on these measurements, we present a comprehensive model for energy transfer mechanisms responsible for light generation in this system. A unique picture of energy flow between subsystems of Er3+ and Si NCs is developed, yielding truly microscopic information on the sensitization effect and its limitations. In particular, we show that most of the Er3+ ions available in the system are participating in the energy exchange. The long standing problem of apparent loss of optical activity of majority of Er dopants upon sensitization with Si NCs is clarified and assigned to appearance of a very efficient energy exchange mechanism between Si NCs and Er3+ ions. Application potential of SiO2:Er sensitized by Si NCs is discussed in view of the newly acquired microscopic insight.Comment: 30 pages 13 figure

Tunneling spin-galvanic effect

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunneling spin-galvanic' effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wavevector of electrons.Comment: 3 pages, 2 figure

Mechanisms of Manganese-Assisted Nonradiative Recombination in Cd(Mn)Se/Zn(Mn)Se Quantum Dots

Mechanisms of nonradiative recombination of electron-hole complexes in Cd(Mn)Se/Zn(Mn)Se quantum dots accompanied by interconfigurational excitations of Mn$^{2+}$ ions are analyzed within the framework of single electron model of deep {\it 3d}-levels in semiconductors. In addition to the mechanisms caused by Coulomb and exchange interactions, which are related because of the Pauli principle, another mechanism due to {\it sp-d} mixing is considered. It is shown that the Coulomb mechanism reduces to long-range dipole-dipole energy transfer from photoexcited quantum dots to Mn$^{2+}$ ions. The recombination due to the Coulomb mechanism is allowed for any states of Mn$^{2+}$ ions and {\it e-h} complexes. In contrast, short-range exchange and ${\it sp-d}$ recombinations are subject to spin selection rules, which are the result of strong {\it lh-hh} splitting of hole states in quantum dots. Estimates show that efficiency of the {\it sp-d} mechanism can considerably exceed that of the Coulomb mechanism. The phonon-assisted recombination and processes involving upper excited states of Mn$^{2+}$ ions are studied. The increase in PL intensity of an ensemble of quantum dots in a magnetic field perpendicular to the sample growth plane observed earlier is analyzed as a possible manifestation of the spin-dependent recombination.Comment: 14 pages, 2 figure

Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between optical and thermal binding energy, and the basic structure of the defect adiabatic potentials. Compared to static fields, high frequency electric fields in the terahertz-range offer various advantages, as they can be applied contactlessly and homogeneously even to bulk samples using the intense radiation of a high power pulsed far-infrared laser. Furthermore, impurity ionization with terahertz radiation can be detected as photoconductive signal with a very high sensitivity in a wide range of electric field strengths

Single-particle states in spherical Si/SiO2_2 quantum dots

We calculate ground and excited electron and hole levels in spherical Si quantum dots inside SiO$_2$ in a multiband effective mass approximation. Luttinger Hamiltonian is used for holes and the strong anisotropy of the conduction electron effective mass in Si is taken into account. As boundary conditions for electron and hole wave functions we use continuity of the wave functions and the velocity density at the boundary of the quantum dots.Comment: 8 pages, 5 figure