Auger recombination in quantum-well InGaAsP heterostructure lasers

Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of T0at around room temperatures

Cavity quantum electro-optics. II. Input-output relations between traveling optical and microwave fields

In the previous paper [M. Tsang, Phys. Rev. A 81, 063837 (2010), e-print arXiv:1003.0116], I proposed a quantum model of a cavity electro-optic modulator, which can coherently couple an optical cavity mode to a microwave resonator mode and enable novel quantum operations on the two modes, including laser cooling of the microwave mode, electro-optic entanglement, and backaction-evading optical measurement of a microwave quadrature. In this sequel, I focus on the quantum input-output relations between traveling optical and microwave fields coupled to a cavity electro-optic modulator. With red-sideband optical pumping, the relations are shown to resemble those of a beam splitter for the traveling fields, so that in the ideal case of zero parasitic loss and critical coupling, microwave photons can be coherently up-converted to "flying" optical photons with unit efficiency, and vice versa. With blue-sideband pumping, the modulator acts as a nondegenerate parametric amplifier, which can generate two-mode squeezing and hybrid entangled photon pairs at optical and microwave frequencies. These fundamental operations provide a potential bridge between circuit quantum electrodynamics and quantum optics.Comment: 12 pages, 10 figures, v2: updated and submitte

One-way coherent imaging through a distorting medium using four-wave mixing

A proposal and an analysis are presented for imaging through a distorting medium using field multiplication by four-wave mixing

Passive Mode-Locking of Monolithic InGaAs/AlGaAs Double Quantum Well Lasers at 42GHz Repetition Rate

Pulse trains with a 42GHz repetition rate were generated by monolithic InGaAs/AlGaAs double quantum well lasers at a wavelength of 985 [angstroms]. The cavity was electrically divided into three regions, one providing gain and the other two providing saturable absorption. The optical modulation has a depth greater than 98% and full-width at half-maximum under 6ps, and bias conditions for sustained mode-locking are determined

Analysis And Performance Of A Picosecond Dye Laser Amplifier Chain

Design considerations are discussed for a simple, easy to use and relatively efficient high gain dye laser amplifier chain for CW mode-locked dye lasers. The amplifier boosts the output of a synchronously mode-locked dye laser to obtain ≈005 mj, ≤ 1 psec pulses over a ≈ 400 Å bandwidth. These pulses are suitable for efficient Raman Shifting, frequency mixing and continuum generation to vastly extend the spectral range of the system. Our amplifier is pumped by a frequency doubled Nd:YAG oscillator only, which longitudinally pumps three identical brewster cells with the same flowing dye solution in each. Contrary to popular belief, high small signal gains (≥ 105) are easily attained in a single stage with longitudinal pumping, with better beam homogeneity and easier alignment than transverse pumping. Gain saturation measurements are presented which agree well with calculations. Factors which relax the pump timing sensitivity are examined. The importance of gain saturation for both efficient amplification and for amplitude stability is also discussed. The need for isolated amplifier stages is stressed and optimal amplifier cell areas for a given stage are calculated

On the linewidth enhancement factor alpha in semiconductor injection lasers

A simple model for the linewidth enhancement factor alpha and its frequency dependence in semiconductor lasers is presented. Calculations based on this model are in reasonable agreement with experimental results

Graded collector heterojunction bipolar transistor

A graded collector heterojunction bipolar transistor is proposed. The graded collector improves device speed performance at high current densities by reducing the influence of the Kirk effect

Effect of spin-orbit interaction on heterojunction band discontinuities

The effect of spin-orbit interaction is included in the linear combination of atomic orbitals calculation of heterojunction band discontinuities. It is found that spin-orbit interaction is not negligible when the atomic number of the constituent atoms exceeds about 40. The effect of spin-orbit interaction as well as some interesting observations and their implications are briefly discussed

Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers

Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new heterostructure laser is grown using this technique. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 45 mA are achieved for a laser with 4-mm-wide active region