15,150 research outputs found
Modeling the underlying mechanisms for organic memory devices: Tunneling, electron emission and oxygen adsorbing
We present a combined experimental and theoretical study to get insight into
both memory and negative differential resistance (NDR) effect in organic memory
devices. The theoretical model we propose is simply a one-dimensional metallic
island array embedding within two electrodes. We use scattering operator method
to evaluate the tunneling current among the electrode and islands to establish
the basic bistable I-V curves for several devices. The theoretical results
match the experiments very well, and both memory and NDR effect could be
understood comprehensively. The experimental correspondence, say, the
experiment of changing the pressure of oxygen, is addressed as well.Comment: 5 pages, 3 figure
Spontaneous symmetry breakings in two-dimensional kagome lattice
We study spontaneous symmetry breakings for fermions (spinless and spinful)
on a two-dimensional kagome lattice with nearest-neighbor repulsive
interactions in weak coupling limit, and focus in particular on topological
Mott insulator instability. It is found that at -filling where
there is a quadratic band crossing at -point, in agreement with Ref. 1,
the instabilities are infinitesimal and topological phases are dynamically
generated. At -filling where there are two inequivalent Dirac
points, the instabilities are finite, and no topological phase is favored at
this filling without breaking the lattice translational symmetry. A
ferromagnetic quantum anomalous Hall state with infinitesimal instability is
further proposed at half-filling of the bottom flat band.Comment: 5 pages, 3 figures, Published in Phys. Rev.
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