Black hole solution and strong gravitational lensing in Eddington-inspired Born-Infeld gravity

A new theory of gravity called Eddington-inspired Born-Infeld (EiBI) gravity was recently proposed by Ba\~{n}ados and Ferreira. This theory leads to some exciting new features, such as free of cosmological singularities. In this paper, we first obtain a charged EiBI black hole solution with a nonvanishing cosmological constant when the electromagnetic field is included in. Then based on it, we study the strong gravitational lensing by the asymptotic flat charged EiBI black hole. The strong deflection limit coefficients and observables are shown to closely depend on the additional coupling parameter $\kappa$ in the EiBI gravity. It is found that, compared with the corresponding charged black hole in general relativity, the positive coupling parameter $\kappa$ will shrink the black hole horizon and photon sphere. Moreover, the coupling parameter will decrease the angular position and relative magnitudes of the relativistic images, while increase the angular separation, which may shine new light on testing such gravity theory in near future by the astronomical instruments.Comment: 14 pages, 7 figures, 1 table. Two issues on the deflection angle and photon sphere were corrected and clarifie

Recrystallized parylene as a mask for silicon chemical etching

This paper presents the first use of recrystallized parylene as masking material for silicon chemical etch. Recrystallized parylene was obtained by melting parylene C at 350°C for 2 hours. The masking ability of recrystallized parylene was tested in HNA (hydrofluoric acid, nitric acid and acetic acid) solution of various ratios, KOH (potassium hydroxide) solution and TMAH (tetramethylammonium hydroxide) at different temperatures and concentrations. It is found that interface between parylene and the substrate can be attacked, which results in undercuts. Otherwise, recrystallized parylene exhibited good adhesion to silicon, complete protection of unexposed silicon and silicon etching rates comparable to literature data