IMPROVING THE PERFORMANCE OF PHOSPHORESCENT BASED WHITE POLYMER LIGHT EMITTING DEVICES USING IRIDIUM COMPLEXES

ABSTRACT Polymer White-light-emittin

Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO) nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene) (DBPPV). The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt%) before annealing (1.78 cd/A) and after annealing (2.45 cd/A) having a brightness 643 and 776 cd/m2at a current density of 36.16 and 31.67 mA/cm2are observed, respectively. Current density–voltage and brightness–voltage characteristics indicate that addition of ZnO nanoparticles can facilitate electrical injection and charge transport. The thermal annealing is thought to result in the formation of an interfacial layer between emissive polymer film and cathode

International Workshop on "Intersubband Transitions in Quantum Wells : Physics and Applications"

The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters

TiO₂ Nano Flowers Based EGFET Sensor for pH Sensing

In this study, pH sensors were successfully fabricated on a fluorine-doped tin oxide substrate and grown via hydrothermal methods for 8 h for pH sensing characteristics. The morphology was obtained by high-resolution scanning electron microscopy and showed randomly oriented flower-like nanostructures. The TiO2 nanoflower pH sensors were measured over a pH range of 2–12. Results showed a high sensitivity of the TiO2 nano-flowers pH sensor, 2.7 (μA)1/2/pH, and a linear relationship between IDS and pH (regression of 0.9991). The relationship between voltage reference and pH displayed a sensitivity of a 46 mV/pH and a linear regression of 0.9989. The experimental result indicated that a flower-like TiO2 nanostructure extended gate field effect transistor (EGFET) pH sensor effectively detected the pH value

Light Output, Thermal Properties, and Reliability of Using Glass Phosphors in WLED Packages

White-light-emitting diodes (WLED) based on yttrium aluminum garnet (YAG) phosphors sintered with glass (PiG) and with silicone (PiS) are compared in terms of their light properties, temperature properties and reliability.The complete YAG phosphor was doped with an encapsulant traditional WLED (PiS WLED), and the WLED was covered with PiG (PiG WLED). PiG was made by sintering glass powder and YAG phosphor at the ratio of 87:13 (%), and the correlated color temperature (CCT) was 5564 K. The CCT of the PiG WLED with the YAG doping concentration of 8.5 wt.% approximated 5649 K. The initial light output of the PiG WLED was 6.4% lower than that of the PiS WLED. Under 1008 h and 350 mA aging, PiG WLED and PiS WLED’ light output, CCT and color rendering index variation rates were all within 1%. In the saturated vapor-pressure test, no sample exhibited red ink infiltration, light nor peeling between the encapsulant and the lead-frame. Compared with that of the PiS WLED, the junction temperature of the PiG WLED reduced from 88.4 °C to 81.3 °C. Thermal resistance dropped from 37.4 °C/W to 35.6 °C/W. The PiG WLED presented a better CIE (Commission Internationale de l’Eclairage) 1931 chromaticity coordinate (x,y) concentration and thermal properties than the PiS WLED

Impact of Oxygen Vacancy on the Photo-Electrical Properties of In2O3-Based Thin-Film Transistor by Doping Ga

In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In2O3 target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition power, were investigated. The device performance revealed that oxygen vacancies are strongly dependent on indium content. However, when the deposition power of the In2O3 target increased, the number of oxygen vacancies, which act as charge carriers to improve the device performance, increased. The best performance was recorded at a threshold voltage of 1.1 V, on-off current ratio of 4.5 × 106, and subthreshold swing of 3.82 V/dec in sample B. Meanwhile, the optical properties of sample B included a responsivity of 0.16 A/W and excellent ultraviolet-to-visible rejection ratio of 8 × 104. IGO TFTs may act as photodetectors according to the results obtained for optical properties