Interfacial Tension of Electrolyte Solutions

A theory is presented to account for the increase in surface tension of water in the presence of electrolyte. Unlike the original ``grand-canonical'' calculation of Onsager and Samaras, which relied on the Gibbs adsorption isotherm and lead to a result which could only be expressed as an infinite series, our approach is ``canonical'' and produces an analytic formula for the excess surface tension. For small concentrations of electrolyte, our result reduces to the Onsager-Samaras limiting law.Comment: contains two figures. Journal of Chemical Physics, in pres

Hole Spin Coherence in a Ge/Si Heterostructure Nanowire

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.Comment: 15 pages, 4 figure