Strain sensor using stress-magnetoresistance effect of Ni-Fe/Mn-Ir exchange-coupled magnetic film

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS. 107(9):09E718 (2010) and may be found at https://doi.org/10.1063/1.3362902 .A strain sensor using a stress-magnetoresistance effect of a Ni-Fe/Mn-Ir exchange-coupled magnetic film was fabricated and evaluated. The stress magnetoresistance is used in the inverse magnetostrictive effect and the magnetoresistance effect in the magnetic film since an external stress is changed into an electric resistance in it. A compressive stress was measured by the strain sensor with a Mn-Ir (10 nm)/Ni-Fe (50 nm)/Ru (1 nm) exchange-coupled film. The change in resistivity Delta rho/rho is proportional to the applied compressive stress sigma for sigma <= 50 MPa in the strain sensor. When increasing Ni-Fe layer thickness in the strain sensor, a gauge factor increased.ArticleJOURNAL OF APPLIED PHYSICS. 107(9):09E718 (2010)journal articl

Mn–Ir/Fe–Si exchange-coupled multilayer film with plural ferromagnetic resonance absorptions for wideband noise filter

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS. 99(8):08M309 (2006) and may be found at https://doi.org/10.1063/1.2177208 .ArticleJOURNAL OF APPLIED PHYSICS. 99(8):08M309 (2006)journal articl

Suppression of insertion loss by slit patterning of a magnetic film in a CoFeB/polyimide hybrid thin-film coplanar line for a rf impedance matching device

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS. 99(8):08P508 (2006) and may be found at https://doi.org/10.1063/1.2172580 .ArticleJOURNAL OF APPLIED PHYSICS. 99(8):08P508 (2006)journal articl

Strain sensor using stress-magnetoresistance effect of Ni–Fe/Mn–Ir exchange-coupled magnetic film

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS. 107(9):09E718 (2010) and may be found at https://doi.org/10.1063/1.3362902 .A strain sensor using a stress-magnetoresistance effect of a Ni-Fe/Mn-Ir exchange-coupled magnetic film was fabricated and evaluated. The stress magnetoresistance is used in the inverse magnetostrictive effect and the magnetoresistance effect in the magnetic film since an external stress is changed into an electric resistance in it. A compressive stress was measured by the strain sensor with a Mn-Ir (10 nm)/Ni-Fe (50 nm)/Ru (1 nm) exchange-coupled film. The change in resistivity Delta rho/rho is proportional to the applied compressive stress sigma for sigma <= 50 MPa in the strain sensor. When increasing Ni-Fe layer thickness in the strain sensor, a gauge factor increased.ArticleJOURNAL OF APPLIED PHYSICS. 107(9):09E718 (2010)journal articl

Mn–Ir∕Fe–Si exchange-coupled multilayer film with plural ferromagnetic resonance absorptions for wideband noise filter

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS. 99(8):08M309 (2006) and may be found at https://doi.org/10.1063/1.2177208 .ArticleJOURNAL OF APPLIED PHYSICS. 99(8):08M309 (2006)journal articl

Synthesized grain size distribution in the interstellar medium

We examine a synthetic way of constructing the grain size distribution in the interstellar medium (ISM). First we formulate a synthetic grain size distribution composed of three grain size distributions processed with the following mechanisms that govern the grain size distribution in the Milky Way: (i) grain growth by accretion and coagulation in dense clouds, (ii) supernova shock destruction by sputtering in diffuse ISM, and (iii) shattering driven by turbulence in diffuse ISM. Then, we examine if the observational grain size distribution in the Milky Way (called MRN) is successfully synthesized or not. We find that the three components actually synthesize the MRN grain size distribution in the sense that the deficiency of small grains by (i) and (ii) is compensated by the production of small grains by (iii). The fraction of each {contribution} to the total grain processing of (i), (ii), and (iii) (i.e., the relative importance of the three {contributions} to all grain processing mechanisms) is 30-50%, 20-40%, and 10-40%, respectively. We also show that the Milky Way extinction curve is reproduced with the synthetic grain size distributions.Comment: 10 pages, 6 figures, accepted for publication in Earth, Planets, and Spac

Mutation analysis of the Gadd45 gene at exon 4 in atypical fibroxanthoma

<p>Abstract</p> <p>Background</p> <p>Atypical fibroxanthoma (AFX) histologically mimics high-grade sarcoma in the skin, although it follows a benign clinical course. AFX occurs in the sun-exposed skin and for this reason, an association with ultraviolet light has long been suspected. Bax and Gadd45 are p53 effector proteins. Bax is a programmed cell death protein and belongs to the Bcl-2 family. Gadd45 is a multifunctional DNA damage-inducible gene associated with the process of DNA damage.</p> <p>Methods</p> <p>Immunohistochemical expression of Bax was analyzed in 7 cases of AFX, and in 7 cases of benign fibrous histiocytoma (BFH) used as a comparison. The expression pattern of Bax was compared to previously reported p53 and Gadd45 expressions in a correspondent series. Mutation of the Gadd45 gene at exon 4 was also analyzed in AFX.</p> <p>Results</p> <p>AFX and BFH showed immunoreactivities respectively for Bax (3/7, 0/7), Gadd45 (4/7, 1/7) and p53 (2/7, 0/7). There was no exact correlation between p53 expression and Bax or Gadd45 expression. However, the pattern of expression between Bax and Gadd45 was also the same, with the exception of one case. No mutation of the Gadd45 gene at exon 4 was observed in a series of 6 AFX cases where DNA was available (0/6).</p> <p>Conclusion</p> <p>These results suggest a possible association between Bax and Gadd45 in AFX, and may refute any possibility of dysfunction of Gadd45 in terms of gene mutation, at least at exon 4 of the Gadd45 gene.</p