Long-lived Higgsino pairs decaying within the LHC detectors

Pair-produced long-lived lightest Higgsinos decaying within a few meters in the LHC detectors are considered. The relatively light nearly-pure Higgsino states object of this study are those of a supersymmetric minimal model with gauge-mediated supersymmetry breaking and heavy sfermions and gauginos. The heavier Higgsinos decay instantly into the lightest one, with very little activities. Hence, all pair-produced Higgsinos end up as a pair of the lightest neutral Higgsinos, possibly long lived and decaying into the gravitino and either the Higgs or the Z boson. If they decay inside the detectors, these bosons deposit huge energies in the calorimeters. The cross section $\sigma_2$ ($\sigma_1$) for the events with two (at least one) decaying-in-flight lightest Higgsinos is examined. The combination $(\sigma_1)^2/\sigma_2$ is found to be almost insensitive to the lightest Higgsino lifetime, thereby providing a good variable to measure its mass. The ratio $\sigma_1/\sigma_2$, instead, mildly dependent on its mass, can give good information on its lifetime. It is argued that the lightest Higgsinos in the events are rather slow, as the very relativistic ones escape away. Thus, the initial state radiations tend to be soft and a trigger system appropriate for such events is necessary to detect them.Comment: 1+11 page

Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

Two-terminal local magnetoresistance (MR) effect in n-type germanium (Ge) based lateral spin-valve (LSV) devices can be observed at room temperature. By using phosphorus δ-doped Heusler-alloy/Ge Schottky-tunnel contacts, the resistance-area product of the contacts is able to be less than 0.20 kΩ μm 2 , which is the lowest value in semiconductor based LSV devices. From the one-dimensional spin drift-diffusion model, the interface spin polarization of the Heusler-alloy/Ge contacts in the present LSV devices can be estimated to be ∼0.018 at room temperature. We experimentally propose that it is important for enhancing the local MR ratio in n-Ge based LSV devices to improve the interface spin polarization of the Heusler-alloy/Ge contacts

Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si

We explore epitaxial growth of Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si, where the Co2MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si

The Effects of Maxillomandibular Advancement and Genioglossus Advancement on Sleep Quality

Maxillomandibular advancement (MMA) using a standardized surgical procedure consisting of a LeFort I osteotomy and bilateral sagittal split ramus osteotomy and genioglossus advancement (GA) using a genioplasty improve airway volume, oxygen desaturation, and the AHI in patients with OSA. However, there are few reports on changes in sleep quality following MMA and GA. We assessed the effects of MMA and GA on sleep quality by comparing oxygen desaturation, AHI, and sleep architecture before and after surgery. Methods: Eight patients underwent polysomnography (PSG) and CT scan before and after surgery. Conclusions: Our study finds that %TST and %REM were both increased, while %S1 and NA both decreased. Based on these results, it appears that both the quality and quantity of sleep were improved. MMA and GA improve sleep respiratory disturbance and can also improve sleep quality

Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts

We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures