24 research outputs found

    Low‐temperature homoepitaxial growth on nonplanar Si substrates

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    The kinetics associated with the breakdown of epitaxy at low temperatures are studied for growth onto a number of Si surfaces, including (001), (117), (115), and (113). These surfaces are all initially generated at trench edges on a single patterned substrate. Growth on each of these surfaces at low temperatures is shown to result in a well‐defined crystalline‐to‐amorphous transition. The epitaxial thicknesses hepi have been measured over a range of substrate temperatures below 280 °C, and activation energies characteristic of this transition were determined. In general, the breakdown in epitaxy occurs such that hepi(001)≳hepi(117)≳hepi(115)≳hepi(113). Growth at slightly higher temperatures, Tsubstrate≳300 °C, shows a different microstructure than that at lower temperatures. Epitaxial growth continues for longer times on (113) facets, as compared with (001). These results are discussed in terms of a recently proposed model explaining the breakdown of epitaxy at lower temperatures and an epitaxial temperature for Si.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70710/2/JAPIAU-76-9-5185-1.pd

    Effect of hydrogen on surface roughening during Si homoepitaxial growth

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    Hydrogen is shown to have a strong influence on the evolution of surface morphology during low temperature (310 °C) Si(100) homoepitaxy. Molecular beam epitaxy growth in the presence of deuterium shows a surface roughness within the epitaxial film that increases rapidly until the Si film exhibits a crystalline to amorphous transition. The rate at which the surface roughens depends critically on the partial pressure of deuterium. Although the kinetics of growth are sensitive to small pressures (4×10−8 Torr) of D, it appears that the breakdown of epitaxy does not result from a ‘‘critical’’ D concentration at the surface. This work suggests that the crystalline to amorphous transition, instead, results from increased roughening during epitaxy.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71213/2/APPLAB-63-26-3571-1.pd

    Combined transmission electron microscopy and x‐ray study of the microstructure and texture in sputtered Mo films

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    The microstructure and texture of thin Mo films sputtered onto the native oxide of Si(100) wafers were investigated with both conventional reflection x‐ray pole figures, and transmission electron microscopy and diffraction. Films were grown at two deposition rates (powers), 34 nm/min (1.5 kW) and 67 nm/min (3.9 kW), onto both moving and stationary substrates, under otherwise identical experimental conditions. The microstructure of the Mo films evolved into a zone 2 microstructure within the first 2 μm of growth. The development of both out‐of‐plane and in‐plane textures was found to be influenced by deposition rate and geometry. Films grown at the lower deposition rate exhibited predominantly {110} textures, while films grown at the higher rate exhibited predominantly {110} textures up to a film thickness of ∼0.5 μm and {111} textures above a film thickness of ∼1 μm. Films with the {110} textures developed grains with elongated footprints and faceted surfaces, while films with the {111} textures developed grains with elongated triangular footprints and faceted surfaces. In all of the films deposited onto moving substrates, an alignment of the grains normal to the tangent plane (defined by the substrate normal and the direction of platen rotation) was observed. In all of the films deposited onto stationary substrates, the development of an in‐plane texture was suppressed. These results suggest that a combination of geometric, energetic, and kinetic mechanisms are contributing to the evolution of the microstructure and texture in the Mo films.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70000/2/JAPIAU-76-8-4610-1.pd

    Growth anisotropy and self-shadowing: A model for the development of in-plane texture during polycrystalline thin-film growth

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    The development of a preferred crystallographic orientation in the plane of growth, an in-plane texture, is addressed in a model that incorporates anisotropic growth rates of a material and self-shadowing. Most crystalline materials exhibit fast growth along certain crystallographic directions and slow growth along others. This crystallographic growth anisotropy, which may be due to differences in surface free energy and surface diffusion, leads to the evolution of specific grain shapes in a material. In addition, self-shadowing due to an obliquely incident deposition flux leads to a variation in in-plane grain growth rates, where the “fast” growth direction is normal to the plane defined by the substrate normal and the incident flux direction. This geometric growth anisotropy leads to the formation of elongated grains in the plane of growth. Neither growth anisotropy alone can explain the development of an in-plane texture during polycrystalline thin-film growth. However, whenever both are present (i.e., oblique incidence deposition of anisotropic materials), an in-plane texture will develop. Grains that have “fast” crystallographic growth directions aligned with the “fast” geometric growth direction overgrow grains that do not exhibit this alignment. Furthermore, the rate of texturing increases with the degree of each anisotropy. This model was used to simulate in-plane texturing during thin-film deposition. The simulation results are in excellent quantitative agreement with recent experimental results concerning the development of in-plane texture in sputter deposited Mo films. © 1997 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71031/2/JAPIAU-82-3-1397-1.pd

    Interfacial and surface energetics of CoSi2

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    The energetics of the CoSi2‐Si interface and the CoSi2 surface have been investigated by analyzing the equilibrium shapes of isolated silicide precipitates. CoSi2 precipitates grown by heating 2 Å of Co on a clean, reconstructed Si{100} surface formed with a number of orientations that remained stable upon annealing to high temperatures. Precipitates buried by a Si capping layer were shown to form along {111} and {100} interfaces. A ratio of the CoSi2‐Si interfacial free energies has been measured from the shapes of a large number of buried precipitates indicating that γ{100}/γ{111}=1.43±0.07. It is suggested that the shape of CoSi2 equilibrated within vacuum consists of {111}, {100}, and {110} facets.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70558/2/JAPIAU-76-9-5190-1.pd

    Surface roughening during low temperature Si(100) epitaxy

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    Reflection high energy electron diffraction (RHEED) was used to investigate surface roughening during low temperature Si(100) homoepitaxy. The use of RHEED allowed in situ real-time collection of structural information from the growth surface. RHEED patterns were analyzed using a simple kinematic diffraction model which related average surface roughness and average in-plane coherence lengths to the lengths and widths of individual RHEED diffraction features, respectively. These RHEED analyses were quantified by calibrating against cross-section transmission electron microscopy (TEM) analyses of surface roughening. Both the RHEED and TEM analyses revealed similar scaling of surface roughness with deposited thickness, with RHEED analyses resulting in roughness values a factor of ∼2 times lower than those obtained from TEM analyses. RHEED was then used to analyze surface roughening during Si(100) homoepitaxial growth in a range of temperatures, 200–275 °C. Initially, surface roughness increased linearly with deposited thickness at a roughening rate that decreased with increasing growth temperature. At each growth temperature, near the crystalline/amorphous Si phase transition, the rate of surface roughening decreased. This decrease coincided with the formation of facets and twins along Si{111} planes. Surface roughness eventually saturated at a value which followed an Arrhenius relation with temperature Eact ∼ 0.31±0.1Eact∼0.31±0.1 eV. This activation energy agrees well with the activation energy for the crystalline/amorphous Si phase transition, Eact ∼ 0.35Eact∼0.35 eV, and suggests that limited thickness epitaxy is characterized by this saturation roughness. Once the saturation roughness was reached, no significant changes in surface roughness were detected. In addition, the decay of average in-plane coherence lengths was also temperature dependent. Values of average coherence lengths, at the crystalline/amorphous Si phase transition, also increased with growth temperature. All of these data are consistent with a model that links surface roughening to the formation of critically sized Si{100} facets and the eventual breakdown in crystalline growth. © 1997 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70948/2/JAPIAU-82-3-1157-1.pd

    Surface roughness and in-plane texturing in sputtered thin films

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    Real surfaces are not flat on an atomic scale. Studying the effects of roughness on microstructural evolution is of relevance because films are sputtered onto nonideal surfaces in many applications. To this end, amorphous rough substrates of two different morphologies, either elongated mounds or facets, were fabricated. The microstructural development of films deposited onto these surfaces was examined. In particular, the development of a preferred crystallographic orientation in the plane of growth in 400 nm thick Mo films grown on the rough substrates was studied using scanning electron microscopy, transmission electron diffraction, and high resolution x-ray diffraction (using ϕ scans in the symmetric grazing incidence x-ray scattering geometry with a synchrotron light source). It was found that the degree of texturing was dependent upon the type of roughness and its orientation during deposition. By limiting the average oblique angle of incident adatom flux, rough surfaces slowed the development of in-plane texture. Comparison between experimental data and theoretical predictions showed that a recent analytical model is able to reasonably predict the degree of texturing in films grown onto these surfaces. © 1998 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70129/2/JAPIAU-84-3-1346-1.pd

    Evolution of in-plane texture in reactively sputtered CrN films

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    The microstructure and texture of chromium nitride films reactively sputtered on silicon substrates were investigated using x-ray scattering, pole figures, transmission electron microscopy, and atomic force microscopy. Under the given deposition geometry, the CrN films were shown to develop a in-plane texture. The three preferred crystallographic orientations of the CrN films approximately coincided with the characteristic directions associated with the deposition geometry. There appear to be two regimes that govern the microstructural evolution and texture development for reactively sputtered chromium films. The first one involves the deposition conditions that lead to the formation of a single, stable phase such as stöichiometric CrN (above certain level of nitrogen partial pressure). In this regime, the film growth appears to be controlled by local epitaxy in individual columns, competitive grain growth, and kinetic roughening. The film characteristics resulted from this regime include the development of the in-plane texture, well-organized microstructures with relatively coarse grains, increased surface roughness, and large tensile stress. The second regime involves the transitional region prior to formation of the stable phase CrN in which significant microstructural refinements take place. This transitional region is associated with the thermodynamically metastable phase CrNxCrNx or the presence of multiple phases. The continuous renucleations during film growth disrupt the local epitaxy and impede kinetic roughening. This leads to film characteristics manifested by weakened or no texture, ultrafine microstructure (e.g., nanocrystalline structures), reduced surface roughness, and a tendency for residual stress to transit from tensile to compressive.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/87655/2/023525_1.pd

    Growth textures of thick sputtered films and multilayers assessed via synchrotron transmission Laue

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    The growth textures of thick sputtered Mo metallizations and Mo/W multilayers, were characterized via a synchrotron white‐beam (WB) x‐ray transmission Laue technique. Transmission x‐ray diffraction studies of Mo specimens up to 61 μm thick were performed with WB synchrotron radiation; while the practical thickness limit for similar observations using a conventional laboratory Cu K(α) x‐ray source is ten times smaller. This unique approach used polychromatic x rays to simultaneously produce diffraction from a wide spread of orientations of many crystallographic planes for all the grains within a relatively large specimen volume (≊60×106 μm3). These patterns were obtained for polycrystalline 31‐ and 61‐μm‐thick Mo/W multilayer specimens, and a 35‐μm‐thick‐monolithic Mo foil specimen. In all three cases the alignment of specimen grains was similar to what would be expected for single‐crystal transmission patterns, except that the recorded intensity distributed was less localized. The WB transmission images were indexed using a reciprocal space construction for the Laue case. In the multilayers, the grains were oriented out‐of‐plane such that 〈110〉 crystallographic planes were aligned in the direction of sputter growth, while in the monolithic Mo specimen 〈111〉 crystallographic planes were so aligned, i.e., perpendicular to the deposition substrate. A spread in orientation of ∼5° was measured in the multilayer specimens, while the monolithic Mo specimen showed a spread of ∼30° when compared to a perfect single‐crystal orientation. Preferred orientation was also observed within the plane of growth to varying degrees for all three samples. © 1995 American Institute of Physics.  Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71326/2/JAPIAU-78-6-3812-1.pd

    Pulsed laser ignition of reactive multilayer films

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    Nanostructured Al/PtAl∕Pt multilayer films were ignited by single pulse irradiation from a Ti:sapphire femtosecond laser system. Critical ignition fluences (0.9–22 J/cm2)(0.9–22J∕cm2) required to initiate a self-propagating reaction were quantified for different multilayer designs. Multilayers with smaller bilayer thickness required relatively lower fluence for ignition. Ignition threshold fluence was also found to be 1.4–3.6 times higher for Al-capped multilayers than for Pt-capped multilayers. Ablation threshold fluences were measured for Al (860±70 mJ/cm2)(860±70mJ∕cm2) and Pt (540±50 mJ/cm2)(540±50mJ∕cm2) and related to the observed difference in ignition fluences for Al- and Pt-capped multilayers.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/87770/2/144102_1.pd
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