Influence of Electrospinning Setup Parameters on Properties of Polymer-Perovskite Nanofibers

Optimizing the properties of electrospun polymer-perovskite nanofibers is considered essential for improving the performance of flexible optoelectronic devices. Here, the influence of electrospinning setup parameters (i.e., electrical voltage, collector type (planar or rotary), rotation speed, as well as process time) on the properties (i.e., external structure, perovskite crystallinity, optical properties, thermal properties, the shrinkage ratio, mechanical properties, and long-term stability) of electrospun polyvinylpyrrolidone nanofibers modified with cesium lead iodide nanocrystals has been studied. The results have shown that the structure of nanofibers is related to the electrical voltage, collector rotation speed, and process duration. Perovskite crystallinity and light absorption have improved by increasing the electrical voltage or/and the process time. The polymer’s glass transition temperature is affected by the embedded perovskite and the collector’s rotation speed. The shrinkage ratio and mechanical properties of nanofibers have been controlled by the rotation speed and the electrical voltage. The shrinkage is caused by the stress created in the nanofibers during the electrospinning process. The best mechanical properties can be noticed with the rotary collector at a rotational speed of 500--750 rpm. Nanofibers have shown good long-term stability and high thermal stability. The long-term stability is inversely proportional to the value of the electrical voltage

Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs

A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed performance of the lasers with L-type device topology (with the largest double-mesa sizes) is mainly limited by electrical parasitics showing noticeable damping of the relaxation oscillations. For the S-type device topology (with the smallest double-mesa sizes), the decrease in the parasitic capacitance of the reverse-biased p+n-junction region outside the buried tunnel junction region allowed to raise the parasitic cutoff frequency up to 13–14 GHz. The key mechanism limiting the high-speed performance of such devices is thus the damping of the relaxation oscillations. VCSELs with S-type device topology demonstrate more than 13 GHz modulation bandwidth and up to 37 Gbps nonreturn-to-zero data transmission under back-to-back conditions at 20 °C