Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation

Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial boundaries, i.e. the exposed top surface and at an electrostatically-controlled backgate with SiO_2 dielectric. These gate-voltage-dependent simulations are compared to previous experimental results and show that strong spin relaxation due to extrinsic effects yield an Si/SiO_2 interfacial spin lifetime of ~ 1ns, orders of magnitude lower than lifetimes in the bulk Si, whereas relaxation at the top surface plays no substantial role. Hall effect measurements on ballistically injected electrons gated in the transport channel yield the carrier mobility directly and suggest that this reduction in spin lifetime is only partially due to enhanced interfacial momentum scattering which induces random spin flips as in the Elliott effect. Therefore, other extrinsic mechanisms such as those caused by paramagnetic defects should also be considered in order to explain the dramatic enhancement in spin relaxation at the gate interface over bulk values

Spin relaxation and decoherence of two-level systems

We revisit the concepts of spin relaxation and spin decoherence of two level (spin-1/2) systems. From two toy-models, we clarify two issues related to the spin relaxation and decoherence: 1) For an ensemble of two-level particles each subjected to a different environmental field, there exists an ensemble relaxation time $T_1^*$ which is fundamentally different from $T_1$. When the off-diagonal coupling of each particle is in a single mode with the same frequency but a random coupling strength, we show that $T_1^*$ is finite while the spin relaxation time of a single spin $T_1$ and the usual ensemble decoherence time $T_2^*$ are infinite. 2) For a two-level particle under only a random diagonal coupling, its relaxation time $T_1$ shall be infinite but its decoherence time $T_2$ is finite.Comment: 5 pages, 2 figure

The Larmor clock and anomalous spin dephasing in silicon

Drift-diffusion theory - which fully describes charge transport in semiconductors - is also universally used to model transport of spin-polarized electrons in the presence of longitudinal electric fields. By transforming spin transit time into spin orientation with precession (a technique called the "Larmor clock") in current-sensing vertical-transport intrinsic Si devices, we show that spin diffusion (and concomitant spin dephasing) can be greatly enhanced with respect to charge diffusion, in direct contrast to predictions of spin Coulomb-drag diffusion suppression.Comment: minor edits and updated ref

Ab initio investigation of Elliott-Yafet electron-phonon mechanism in laser-induced ultrafast demagnetization

The spin-flip (SF) Eliashberg function is calculated from first-principles for ferromagnetic Ni to accurately establish the contribution of Elliott-Yafet electron-phonon SF scattering to Ni's femtosecond laser-driven demagnetization. This is used to compute the SF probability and demagnetization rate for laser-created thermalized as well as non-equilibrium electron distributions. Increased SF probabilities are found for thermalized electrons, but the induced demagnetization rate is extremely small. A larger demagnetization rate is obtained for {non-equilibrium} electron distributions, but its contribution is too small to account for femtosecond demagnetization.Comment: 5 pages, 3 figures, to appear in PR

The dominant spin relaxation mechanism in compound organic semiconductors

Despite the recent interest in "organic spintronics", the dominant spin relaxation mechanism of electrons or holes in an organic compound semiconductor has not been conclusively identified. There have been sporadic suggestions that it might be hyperfine interaction caused by background nuclear spins, but no confirmatory evidence to support this has ever been presented. Here, we report the electric-field dependence of the spin diffusion length in an organic spin-valve structure consisting of an Alq3 spacer layer, and argue that this data, as well as available data on the temperature dependence of this length, contradict the notion that hyperfine interactions relax spin. Instead, they suggest that the Elliott-Yafet mechanism, arising from spin-orbit interaction, is more likely the dominant spin relaxing mechanism.Comment: Accepted for publication in Physical Review

Elliot-Yafet mechanism in graphene

The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times acquires a dependence on the carrier density, which is independent of the scattering mechanism and the relation between mobility and carrier concentration. This dependence puts severe restrictions on the origin of the spin relaxation in graphene. The density dependence of the spin relaxation allows us to distinguish between ordinary impurities and defects which modify locally the spin-orbit interaction.Comment: 4 pages + \epsilon + S

Surface spin flip probability of mesoscopic Ag wires

Spin relaxation in mesoscopic Ag wires in the diffusive transport regime is studied via nonlocal spin valve and Hanle effect measurements performed on permalloy/Ag lateral spin valves. The ratio between momentum and spin relaxation times is not constant at low temperatures. This can be explained with the Elliott-Yafet spin relaxation mechanism by considering the momentum surface relaxation time as being temperature dependent. We present a model to separately determine spin flip probabilities for phonon, impurity and surface scattering and find that the spin flip probability is highest for surface scattering.Comment: 5 pages, 4 figure