A Green Approach for Highly Reduction of Graphene Oxide by Supercritical Fluid

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Transport properties of field-effect transistor with Langmuir-Blodgett films of C_<60> dendrimer and estimation of impurity levels

Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C_ dendrimer. The device showed n-channel normally off characteristics with the field-effect mobility of 2.7×10^3 cm^2 V^ s^ at 300 K, whose value is twice as high as that (1.4×10^ cm^2 V^ s) for the FET with spin-coated films of C_ dendrimer. This originates from the formation of ordered π-conduction network of C_ moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films