2,118 research outputs found
Electron localization near Mott transition in organic superconductor -(BEDT-TTF)Cu[N(CN)Br
The effect of disorder on the electronic properties near the Mott transition
is studied in an organic superconductor
-(BEDT-TTF)Cu[N(CN)]Br, which is systematically irradiated
by X-ray. We observe that X-ray irradiation causes Anderson-type electron
localization due to molecular disorder. The resistivity at low temperatures
demonstrates variable range hopping conduction with Coulomb interaction. The
experimental results show clearly that the electron localization by disorder is
enhanced by the Coulomb interaction near the Mott transition.Comment: 5 pages, 4 figure
Magnetic and Electronic Phase Diagram and Superconductivity in the Organic Superconductors k-(BEDT-TTF)2X
The magnetic susceptibility of the organic superconductors -(h8 or
d8-ET), Cu(NCS) and Cu[N(CN)]Br has been studied. A
metallic phase below 37 38 K for Cu[N(CN)]Br and
46 50 K for Cu(NCS) has an anisotropic temperature
dependence of the susceptibility and the charge transport. Partial
charge-density-wave or charge fluctuation is expected to coexist with the
metallic phase instead of the large antiferromagnetic fluctuation above
. The phase diagram and the superconductivity of -(ET)
are discussed in connection with this phase.Comment: 5 pages, 4figures, REVTeX, references are corrected, accepted for
pubication in Phys. Rev.
Low temperature vortex liquid states induced by quantum fluctuations in the quasi two dimensional organic superconductor kappa-(BEDT-TTF)_{2} Cu(NCS)_{2}
We report the transport properties in the vortex liquid states induced by
quantum fluctuations at low temperature in the layered organic superconductor
kappa-(BEDT-TTF)_{2} Cu(NCS)_{2}. A steep drop of the resistivity observed
below about 1 K separates the liquid state into two regions. In the low
resistance state at lower temperature, a finite resistivity with weak
temperature dependence persists down to 100 mK at least. The finite resistivity
in the vortex state at T ~= 0 K indicates the realization of quantum vortex
liquid assisted by the strong quantum fluctuations instead of the thermal one.
A possible origin for separating these liquid states is a remnant vortex
melting line at the original position, which is obscured and suppressed by the
quantum fluctuations. A non-linear behavior of the in-plane resistivity appears
at large current density in only the low resistance state, but not in another
vortex liquid state at higher temperature, where the thermal fluctuations are
dominant. The transport properties in the low resistance state are well
understood in the vortex slush concept with a short-range order of vortices.
Thus the low resistance state below 1 K is considered to be a novel quantum
vortex slush state.Comment: 7 pages, 5 figure
Relaxor ferroelectricity induced by electron correlations in a molecular dimer Mott insulator
We have investigated the dielectric response in an antiferromagnetic
dimer-Mott insulator beta'-(BEDT-TTF)2ICl2 with square lattice, compared to a
spin liquid candidate kappa-(BEDT-TTF)2Cu2(CN)3. Temperature dependence of the
dielectric constant shows a peak structure obeying Curie-Weiss law with strong
frequency dependence. We found an anisotropic ferroelectricity by pyrocurrent
measurements, which suggests the charge disproportionation in a dimer. The
ferroelectric actual charge freezing temperature is related to the
antiferromagnetic interaction, which is expected to the charge-spin coupled
degrees of freedom in the system.Comment: 5 pages, 4 figures, to be published in Phys. Rev.
Optical probe of carrier doping by X-ray irradiation in organic dimer Mott insulator -(BEDT-TTF)Cu[N(CN)Cl
We investigated the infrared optical spectra of an organic dimer Mott
insulator -(BEDT-TTF)Cu[N(CN)]Cl, which was irradiated with
X-rays. We observed that the irradiation caused a large spectral weight
transfer from the mid-infrared region, where interband transitions in the dimer
and Mott-Hubbard bands take place, to a Drude part in a low-energy region; this
caused the Mott gap to collapse. The increase of the Drude part indicates a
carrier doping into the Mott insulator due to irradiation defects. The strong
redistribution of the spectral weight demonstrates that the organic Mott
insulator is very close to the phase border of the bandwidth-controlled Mott
transition.Comment: 4 pages, 4 figure
Phase separation in the vicinity of the surface of -(BEDT-TTF)Cu[N(CN)]Br by fast cooling
Partial suppression of superconductivity by fast cooling has been observed in
the organic superconductor -(BEDT-TTF)Cu[N(CN)]Br by two means:
a marked sample size effect on the magnetic susceptibility and direct imaging
of insulating regions by scanning microregion infrared reflectance
spectroscopy. Macroscopic insulating regions are found in the vicinity of the
crystalline surface after fast cooling, with diameters of 50--100 m and
depths of a few m. The very large in-plane penetration depth reported to
date ( 24--100 m) can be explained by the existence of the
insulating regions.Comment: Several rhetoric alternations to avoid misleadings. 6 pages, 3
figures. to be publihsed in Phys. Rev.
Imaging phase separation near the Mott boundary in the correlated organic superconductors -(BEDT-TTF)X
Electronic phase separation consisting of the metallic and insulating domains
with 50 -- 100 m in diameter is found in the organic Mott system
-[(8-BEDT-TTF)(8-BEDT-TTF)]Cu[N(CN)]Br
by means of scanning micro-region infrared spectroscopy using the synchrotron
radiation. The phase separation appears below the critical end temperature 35
-- 40 K of the first order Mott transition. The observation of the macroscopic
size of the domains indicates a different class of the intrinsic electronic
inhomogeneity from the nano-scale one reported in the inorganic Mott systems
such as High- copper and manganese oxides.Comment: 4 pages, 3 figure
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