Resistive Switching Assisted by Noise

We extend results by Stotland and Di Ventra on the phenomenon of resistive switching aided by noise. We further the analysis of the mechanism underlying the beneficial role of noise and study the EPIR (Electrical Pulse Induced Resistance) ratio dependence with noise power. In the case of internal noise we find an optimal range where the EPIR ratio is both maximized and independent of the preceding resistive state. However, when external noise is considered no beneficial effect is observed.Comment: To be published in "Theory and Applications of Nonlinear Dynamics: Model and Design of Complex Systems", Proceedings of ICAND 2012 (Springer, 2013

Bias-voltage induced phase-transition in bilayer quantum Hall ferromagnets

We consider bilayer quantum Hall systems at total filling factor $\nu=1$ in presence of a bias voltage $\Delta_v$ which leads to different filling factors in each layer. We use auxiliary field functional integral approach to study mean-field solutions and collective excitations around them. We find that at large layer separation, the collective excitations soften at a finite wave vector leading to the collapse of quasiparticle gap. Our calculations predict that as the bias voltage is increased, bilayer systems undergo a phase transition from a compressible state to a $\nu=1$ phase-coherent state {\it with charge imbalance}. We present simple analytical expressions for bias-dependent renormalized charge imbalance and pseudospin stiffness which are sensitive to the softening of collective modes.Comment: 12 pages, 5 figures. Minor changes, one reference adde

Theory of the tunneling resonances of the bilayer electron systems in strong magnetic field

We develop a theory for the anomalous interlayer conductance peaks observed in bilayer electron systems at nu=1. Our model shows the that the size of the peak at zero bias decreases rapidly with increasing in-plane magnetic field, but its location is unchanged. The I-V characteristic is linear at small voltages, in agreement with experimental observations. In addition we make quantitative predictions for how the inter-layer conductance peaks vary in position with in-plane magnetic field at high voltages. Finally, we predict novel bi-stable behavior at intermediate voltages.Comment: 5 pages, 2 figure

Effect of Subband Landau Level Coupling to the Linearly Dispersing Collective Mode in a Quantum Hall Ferromagnet

In a recent experiment (Phys. Rev. Lett. {\bf 87}, 036903 (2001)), Spielman et al observed a linearly dispersing collective mode in quantum Hall ferromagnet. While it qualitatively agrees with the Goldstone mode dispersion at small wave vector, the experimental mode velocity is slower than that calculated by previous theories by a factor about 0.55. A better agreement with the experimental data may possibly be achieved by taking the subband Landau level coupling into account due to the finiteness of the layer thickness. A novel coupling of quantum fluctuation to the tunneling is briefly discussed.Comment: 4 pages; published versio

Lattice Pseudospin Model for ν=1\nu=1 Quantum Hall Bilayers

We present a new theoretical approach to the study of $\nu=1$ quantum Hall bilayer that is based on a systematic mapping of the microscopic Hamiltonian to an anisotropic SU(4) spin model on a lattice. To study the properties of this model we generalize the Heisenberg model Schwinger boson mean field theory (SBMFT) of Arovas and Auerbach to spin models with anisotropy. We calculate the temperature dependence of experimentally observable quantities, including the spin magnetization, and the differential interlayer capacitance. Our theory represents a substantial improvement over the conventional Hartree-Fock picture which neglects quantum and thermal fluctuations, and has advantages over long-wavelength effective models that fail to capture important microscopic physics at all realistic layer separations. The formalism we develop can be generalized to treat quantum Hall bilayers at filling factor $\nu=2$.Comment: 26 pages, 10 figures. The final version, to appear in PR

ν=2\nu=2 Bilayer Quantum Hall System in Tilted Magnetic Field

We report on a theoretical study of $\nu=2$ bilayer quantum Hall systems with a magnetic field that has a component parallel to the layers. As in the $\nu=1$ case, interlayer phase coherence is closely coupled to electron correlations and the Aharonov-Bohm phases introduced by a parallel magnetic field can have a strong influence on the ground state of the system. We find that response of a $\nu=2$ system to a parallel field is more subtle than that of a $\nu=1$ system because of the interplay between spin and layer degrees of freedom. There is no commensurate-incommensurate transition as the parallel field is increased. Instead, we find a new phase transition which can occur in fixed parallel field as the interlayer bias potential is varied. The transition is driven by the competition between canted antiferromagnetic order and interlayer phase coherence in the presence of the parallel field. We predict a strong singularity in the differential capacitance of the bilayer which can be used to detect the phase transition.Comment: 11 pages, 6 figures. The final version, to appear in PR

Noncommutative Geometry, Extended W(infty) Algebra and Grassmannian Solitons in Multicomponent Quantum Hall Systems

Noncommutative geometry governs the physics of quantum Hall (QH) effects. We introduce the Weyl ordering of the second quantized density operator to explore the dynamics of electrons in the lowest Landau level. We analyze QH systems made of $N$-component electrons at the integer filling factor $\nu=k\leq N$. The basic algebra is the SU(N)-extended W$_{\infty}$. A specific feature is that noncommutative geometry leads to a spontaneous development of SU(N) quantum coherence by generating the exchange Coulomb interaction. The effective Hamiltonian is the Grassmannian $G_{N,k}$ sigma model, and the dynamical field is the Grassmannian $G_{N,k}$ field, describing $k(N-k)$ complex Goldstone modes and one kind of topological solitons (Grassmannian solitons).Comment: 15 pages (no figures

Critical Currents of Ideal Quantum Hall Superfluids

Filling factor $\nu=1$ bilayer electron systems in the quantum Hall regime have an excitonic-condensate superfluid ground state when the layer separation $d$ is less than a critical value $d_c$. On a quantum Hall plateau current injected and removed through one of the two layers drives a dissipationless edge current that carries parallel currents, and a dissipationless bulk supercurrent that carries opposing currents in the two layers. In this paper we discuss the theory of finite supercurrent bilayer states, both in the presence and in the absence of symmetry breaking inter-layer hybridization. Solutions to the microscopic mean-field equations exist at all condensate phase winding rates for zero and sufficiently weak hybridization strengths. We find, however, that collective instabilities occur when the supercurrent exceeds a critical value determined primarily by a competition between direct and exchange inter-layer Coulomb interactions. The critical current is estimated using a local stability criterion and varies as $(d_c-d)^{1/2}$ when $d$ approaches $d_c$ from below. For large inter-layer hybridization, we find that the critical current is limited by a soliton instability of microscopic origin.Comment: 18 RevTeX pgs, 21 eps figure

Improved dual sided doped memristor: modelling and applications

Memristor as a novel and emerging electronic device having vast range of applications suffer from poor frequency response and saturation length. In this paper, the authors present a novel and an innovative device structure for the memristor with two active layers and its non-linear ionic drift model for an improved frequency response and saturation length. The authors investigated and compared the I–V characteristics for the proposed model with the conventional memristors and found better results in each case (different window functions) for the proposed dual sided doped memristor. For circuit level simulation, they developed a SPICE model of the proposed memristor and designed some logic gates based on hybrid complementary metal oxide semiconductor memristive logic (memristor ratioed logic). The proposed memristor yields improved results in terms of noise margin, delay time and dynamic hazards than that of the conventional memristors (single active layer memristors)