3 research outputs found
Simulation of boron diffusion during low-temperature annealing of implanted silicon
Modeling of ion-implanted boron redistribution in silicon crystals during
low-temperature annealing with a small thermal budget has been carried out. It
was shown that formation of "tails"' in the low-concentration region of
impurity profiles occurs due to the long-range migration of boron interstitialsComment: 16 pages, 3 figure