3 research outputs found

    Simulation of boron diffusion during low-temperature annealing of implanted silicon

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    Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs due to the long-range migration of boron interstitialsComment: 16 pages, 3 figure
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