3,963 research outputs found

    Phase Transitions in the Two-Dimensional XY Model with Random Phases: a Monte Carlo Study

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    We study the two-dimensional XY model with quenched random phases by Monte Carlo simulation and finite-size scaling analysis. We determine the phase diagram of the model and study its critical behavior as a function of disorder and temperature. If the strength of the randomness is less than a critical value, σc\sigma_{c}, the system has a Kosterlitz-Thouless (KT) phase transition from the paramagnetic phase to a state with quasi-long-range order. Our data suggest that the latter exists down to T=0 in contradiction with theories that predict the appearance of a low-temperature reentrant phase. At the critical disorder TKT→0T_{KT}\rightarrow 0 and for σ>σc\sigma > \sigma_{c} there is no quasi-ordered phase. At zero temperature there is a phase transition between two different glassy states at σc\sigma_{c}. The functional dependence of the correlation length on σ\sigma suggests that this transition corresponds to the disorder-driven unbinding of vortex pairs.Comment: LaTex file and 18 figure

    Phase diagram of a Disordered Boson Hubbard Model in Two Dimensions

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    We study the zero-temperature phase transition of a two-dimensional disordered boson Hubbard model. The phase diagram of this model is constructed in terms of the disorder strength and the chemical potential. Via quantum Monte Carlo simulations, we find a multicritical line separating the weak-disorder regime, where a random potential is irrelevant, from the strong-disorder regime. In the weak-disorder regime, the Mott-insulator-to-superfluid transition occurs, while, in the strong-disorder regime, the Bose-glass-to-superfluid transition occurs. On the multicritical line, the insulator-to-superfluid transition has the dynamical critical exponent z=1.35±0.05z=1.35 \pm 0.05 and the correlation length critical exponent ν=0.67±0.03\nu=0.67 \pm 0.03, that are different from the values for the transitions off the line. We suggest that the proliferation of the particle-hole pairs screens out the weak disorder effects.Comment: 4 pages, 4 figures, to be published in PR

    Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

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    Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological surface states. Appropriate surface passivation or encapsulation may be required to probe topological surface states of Bi2Se3 by transport measurements

    Thickness-Magnetic Field Phase Diagram at the Superconductor-Insulator Transition in 2D

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    The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by changing the film thickness, with and without an applied magnetic field. The first experimentally obtained phase diagram is mapped as a function of thickness and magnetic field in the T=0 limit. A finite size scaling analysis has been carried out to determine the critical exponent product vz, which was found to be 1.2 for the zero field transition, and 1.4 for the finite field transition. Both results are different from the exponents found for the magnetic field tuned transition in the same system, 0.7.Comment: 4 pages, 4 figure

    The Field-Tuned Superconductor-Insulator Transition with and without Current Bias

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    The magnetic-field-tuned superconductor-insulator transition has been studied in ultrathin Beryllium films quench-condensed near 20 K. In the zero-current limit, a finite-size scaling analysis yields the scaling exponent product vz = 1.35 +/- 0.10 and a critical sheet resistance R_{c} of about 1.2R_{Q}, with R_{Q} = h/4e^{2}. However, in the presence of dc bias currents that are smaller than the zero-field critical currents, vz becomes 0.75 +/- 0.10. This new set of exponents suggests that the field-tuned transitions with and without dc bias currents belong to different universality classes.Comment: RevTex 4 pages, 4 figures, and 1 table minor change
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