EXPERIMENTAL INVESTIGATION ON THE POWER ELECTRONIC TRANSISTOR PARAMETERS INFLUENCE TO THE NEAR-FIELD RADIATION FOR THE EMC APPLICATIONS

Abstract—With the increases of the module integration density and complexity in electrical and power electronic systems, serious problems related to electromagnetic interference (EMI) and electromagnetic compatibility (EMC) can occur. For the safety, these disturbing effects must be considered during the electronic equipment design process. One of the concerns on EMC problems is induced by unintentional near-field (NF) radiations. The modeling and measurement of EM NF radiations is one of the bottlenecks which must be overcome by electronic engineers. To predict the unwanted different misbehaviors caused by the EM radiation, NF test benches for the reconstitution of scanning maps at some millimeters of electrical/electronic circuits under test were developed at the IRSEEM laboratory. Due to the difficulty of the design with commercial simulators, the prediction of EM NF emitted by active electronic systems which are usually based on the use of transistors necessitates more relevant and reliable analysis techniques. For this reason, the main focus of this article is on the experimental analysis of EM NF radiated by an MOSFET transistor with changing electrical parameters. Descriptions of the experimental test bench for the EM map scan of transistors radiation are provided. This experimental setup allows not only to detect the EM NF emission but also to analyze the influence of the excitation signal parameter