Reversible phase transformation in the Pd2Si-PdSi thin-film system

The thermal stability of thin PdSi films has been studied at temperatures ranging between 300 and 700 °C. The PdSi, when in contact with crystalline Si, transforms into Pd2Si and Si at temperatures of 500–700 °C, a process contrary to the equilibrium-phase diagram. The rate of transformation was found to depend on the structure and orientation of the Si. Upon heating above 750 °C, Pd2Si transforms back to PdSi. However, PdSi is stable against annealing when in contact with Pd2Si or an inert substrate SiO2. We propose that the decomposition of PdSi into Pd2Si and Si in the presence of crystalline Si is due to a lower interface energy of the Pd2Si-Si interface compared to that of the PdSi-Si interface

Dominant moving species in the formation of amorphous NiZr by solid-state reaction

The displacements of W and Hf markers have been monitored by backscattering of MeV He to study the growth of the amorphous NiZr phase by solid-state reaction. We find that the Ni is the dominant moving species in this reaction

Magnetoelectric properties of magnetite thin films

Resistivity, DC Hall effect and transverse magnetoresistance measurements were made on polycrystalline thin films of magnetite (Fe3O4) from 104K to room temperature. The Verwey transition is observed at TV=123K, about 4K higher than reported for bulk magnetite. The ordinary and extraordinary Hall coefficients are negative over the entire temperature range, consistent with negatively charged carriers. The extraordinary Hall coefficient exhibits a rho 1/3 dependence on the resistivity above TV and a rho 2/3 dependence below TV. The magnetoresistance is negative at all temperatures and for all magnetic field strengths. The planar Hall effect signal was below the sensitivity of the present experiment

Sequence of phase formation in planar metal-Si reaction couples

A correlation is found between the sequence of phase formation in thin-film metal-Si interactions and the bulk equilibrium phase diagram. After formation of the first silicide phase, which generally follows the rule proposed by Walser and Bené, the next phase formed at the interface between the first phase and the remaining element (Si or metal) is the nearest congruently melting compound richer in the unreacted element. If the compounds between the first phase and the remaining element are all noncongruently melting compounds (such as peritectic or peritectoid phases), the next phase formed is that with the smallest temperature difference between the liquidus curve and the peritectic (or peritectoid) point

Correlation between cohesive energy and mixing rate in ion mixing of metallic bilayers

We have compared the mixing rate of several 5d-4d metal bilayers which form ideal solutions. We observe a strong correlation between the mixing rate and the average cohesive energy of each bilayer. A model based on the thermal spike concept is proposed to explain this behavior. The model leads to a general expression describing mixing rates in metallic bilayers

Effect of thermodynamics on ion mixing

Ion mixing of elemental 4d-5d metallic bilayers at 77 K by 600 keV Xe + + ions has been studied to test the validity of the phenomenological model of ion mixing that predicts a dependence on the chemical heats of mixing, DeltaHmix, and on the cohesive energies, DeltaHcoh, of the bilayer elements. A series of samples was chosen to minimize the variation in kinematical properties between samples while maximizing the variation in heats of mixing. The experimental results agree well with the model's predictions, and the experimentally determined constants K1=0.034 Å and K2=27 agree with those of previous work

Influence of chemical driving forces in ion mixing of metallic bilayers

The effective interdiffusion coefficient of metallic bilayers under ion irradiation has been correlated with the heat of mixing of corresponding binary alloys. The results are interpreted according to Darken's theory of chemically enhanced diffusion

Interfacial strain in AlxGa1–xAs layers on GaAs

Detailed analysis of x-ray rocking curves was used to determine the depth profile of strain and composition in a 2500-Å-thick layer of AlxGa1–xAs grown by metalorganic chemical vapor deposition on 100 GaAs. The x value and layer thickness were in good agreement with the values expected from growth parameters. The presence of a transition region, 280 Å thick, was detected by the rocking curve. In this region, the Al concentration varies smoothly from 0 to 0.87. Measurement and control of the sharpness of such interfaces has important implications for heterojunction devices

Depth dependence of atomic mixing by ion beams

Ion backscattering spectrometry has been used to investigate the depth dependence of atomic mixing induced by ion beams. Samples consisting of a thin Pt (or Si) marker a few tens of angstroms thick buried at different depths in a deposited Si (or Pt) layer were bombarded with Xe+ of 300 keV at 2×10^16 cm^–2 dose and Ar+ of 150 keV at 5×10^15cm^–2 dose. Significant spreading of the marker was observed as a result of ion irradiation. The amount of spreading was measured as a function of depth of the marker, which was then compared with the deposited energy distribution. Measurements of this kind promise new insight into the nature of the interaction between ion beams and solids

Reflection high-energy electron diffraction patterns of CrSi_2 films on (111) silicon

Highly oriented films of the semiconducting transition metal silicide, CrSi2, were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi_2(001)/Si(111). Reflection high‐energy electron diffraction (RHEED) yielded symmetric patterns of sharp streaks. The expected streak spacings for different incident RHEED beam directions were calculated from the reciprocal net of the CrSi_2(001) face and shown to match the observed spacings. The predominant azimuthal orientation of the films was thus determined to be CrSi_2〈210〉∥Si〈110〉. This highly desirable heteroepitaxial relationship may be described with a common unit mesh of 51 Å^2 and a mismatch of −0.3%. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi_2〈110〉∥Si〈110〉. A new common unit mesh for this competing orientation is suggested; it possesses an area of 612 Å^2 and a mismatch of −1.2%