3 research outputs found
Spin Resistivity in Frustrated Antiferromagnets
In this paper we study the spin transport in frustrated antiferromagnetic FCC
films by Monte Carlo simulation. In the case of Ising spin model, we show that
the spin resistivity versus temperature exhibits a discontinuity at the phase
transition temperature: an upward jump or a downward fall, depending on how
many parallel and antiparallel localized spins interacting with a given
itinerant spin. The surface effects as well as the difference of two degenerate
states on the resistivity are analyzed. Comparison with non frustrated
antiferromagnets is shown to highlight the frustration effect. We also show and
discuss the results of the Heisenberg spin model on the same lattice
Monte Carlo Study of Magnetic Resistivity in Semiconducting MnTe
We investigate in this paper properties of the spin resistivity in the
magnetic semiconducting MnTe of NiAs structure. MnTe is a crossroad
semiconductor with a large band gap. It is an antiferromagnet with the N\'eel
temperature around 310K. Due to this high N\'eel temperature, there are many
applications using its magnetic properties. The method we use here is the Monte
Carlo simulation in which we take into account the interaction between
itinerant spins and lattice Mn spins. Our results show a very good agreement
with experiments on the shape of the spin resistivity near the N\'eel
temperature