Different Melting Behavior in Pentane and Heptane Monolayers on Graphite; Molecular Dynamics Simulations

Molecular dynamics simulations are utilized to study the melting transition in pentane (C5H12) and heptane (C7H16), physisorbed onto the basal plane of graphite at near-monolayer coverages. Through use of the newest, optimized version of the anisotropic united-atom model (AUA4) to simulate both systems at two separate coverages, this study provides evidence that the melting transition for pentane and heptane monolayers are significantly different. Specifically, this study proposes a very rapid transition from the solid crystalline rectangular-centered (RC) phase to a fluid phase in pentane monolayers, whereas heptane monolayers exhibit a slower transition that involves a more gradual loss of RC order in the solid-fluid phase transition. Through a study of the melting behavior, encompassing variations where the formation of gauche defects in the alkyl chains are eliminated, this study proposes that this gradual melting behavior for heptane monolayers is a result of less orientational mobility of the heptane molecules in the solid RC phase, as compared to the pentane molecules. This idea is supported through a study of a nonane monolayer, which gives the gradual melting signature that heptane monolayers also seem to indicate. The results of this work are compared to previous experiment over pentane and heptane monolayers, and are found to be in good agreement

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution

Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off-state and the other is a conductive on-state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, non-volatile threshold switching, and current--voltage duality. From the systematic sample-size dependence of the resistance in on- and off-states, we conclude that the resistance switching is due to the homogeneous/inhomogeneous transition of the current distribution at the interface.Comment: 7 pages, 5 figures, REVTeX4, submitted to Phys. Rev. B (Feb. 23, 2007). If you can't download a PDF file of this manscript, an alternative one can be found on the author's website: http://staff.aist.go.jp/i.inoue

A mechanism for unipolar resistance switching in oxide non-volatile memory devices

Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures.Comment: 4 pages, 2 figure